一步溶液法制备有机-无机杂化钙钛矿薄膜  

Preparation of Organic-Inorganic Hybrid Perovskite Thin Films by One-Step Solution Method

作　　者：李新利[1,2] 陈永超[1] 李丽华[1] 马战红[1] 任凤章[1] 卢景霄[2] 黄金亮[1] 

机构地区：[1]河南科技大学材料科学与工程学院,河南洛阳471023 [2]郑州大学材料物理教育部重点实验室,郑州450052

出　　处：《半导体技术》2017年第8期620-625,共6页Semiconductor Technology

基　　金：河南省高校重点科研项目(15A430023);河南省国际合作项目(152102410035);河南省创新人才计划资助项目(144200510001);河南科技大学青年基金资助项目(2015QN015);河南科技大学博士后基金资助项目(13554010)

摘　　要：有机-无机杂化钙钛矿薄膜作为太阳电池的光吸收层,其薄膜的形貌、结构以及结晶程度等因素对电池的光电转换效率起到了决定性的作用,而薄膜的质量主要取决于制备工艺。采用一步溶液法制备了有机-无机杂化钙钛矿(CH_3NH_3PbI_3)薄膜,主要分析了在氟掺杂氧化锡(FTO)导电玻璃、玻璃和多晶硅3种不同衬底上生长CH_3NH_3PbI_3薄膜的形貌和结构的差异。结果表明,在FTO导电玻璃和玻璃衬底上生长的薄膜的晶粒尺寸和晶粒分布均匀,而在硅衬底上生长的薄膜的边缘晶粒尺寸大于中心处的晶粒,并详细分析了造成这种现象的原因。此外,在50℃的低温下对在FTO导电玻璃衬底生长的CH_3NH_3PbI_3薄膜进行了不同时间的退火处理。实验结果表明,随着热处理时间的增加,晶粒尺寸也增加,但是合成的CH_3NH_3PbI_3薄膜部分发生了分解。The organic-inorganic hybrid perovskite thin film is used as the light absorbing layer of the solar cell,and its morphology,structure and grain size play a decisive role in the photovoltaic conversion efficiency of the solar cell. The quality of the thin film mainly depends on the preparation process.The organic-inorganic hybrid perovskite（ H3NH3PbI3） thin films were prepared by using the one-step solution method. The differences of the morphologies and structures of H3NH3PbI3 thin films grown on fluorine doped tin oxide（ FTO） conductive glass,glass and polycrystalline silicon wafers were mainly analyzed.The results show that the grain size and distribution of the H3NH3PbI3 thin film grown on FTO conductive glass and glass substrates are uniform. However,the grain size of the film on the edge of silicon substrates is larger than that of the film in center. The cause of this phenomenon was analyzed in detail. Furthermore,the H3NH3PbI3 thin films grown on FTO conductive glass substrate were taken annealing treatment at 50 ℃ with different annealing time. The experimental results show that the grain size increases with the increase of the annealing time, but the synthetic H3NH3PbI3 thin film has beenpartially decomposed.

关 键 词：有机-无机杂化钙钛矿薄膜 一步溶液法 薄膜形貌 生长机理 退火处理 

分 类 号：TN304.05[电子电信—物理电子学]