基于Pt/CdS与InSb光伏型紫外—红外焦平面探测器的双色探测机理（英文）  

Analysis of ultraviolet and infrared dual-color focal-plane array detector based on Pt/CdS and InSb junctions

作　　者：李庆[1,2] 白杰[1] 吕衍秋[3] 胡伟达[1] 陈效双[1] 陆卫[1] 

机构地区：[1]中国科学院上海技术物理研究所,上海200083 [2]中国科学院大学,北京100049 [3]中国空空导弹研究院,河南洛阳471009

出　　处：《红外与毫米波学报》2017年第4期385-388,共4页Journal of Infrared and Millimeter Waves

基　　金：Supported by National Natural Science Foundation of China(11427807,61521005,11334008)

摘　　要：基于新型的时域有限差分光子学分析方法联合有限元电学分析方法研究了Pt/CdS紫外与InSb红外双色焦平面阵列探测器的双色探测机理.研究发现超薄Pt金属膜与CdS形成肖特基结可以获得较大的紫外光响应并能更好耦合红外光.采用像元间距为50μm的Pt/CdS与InSb键合结构,可以很好地抑制像元间的串音.结果证明了紫外-红外双色探测的可行性,该方法将为紫外—红外双色探测器的设计提供基础指导.Based on finite difference time domain method （FDTD） and finite element method （FEM）, the mechanism of Pt/CdS and InSb ultraviolet-infrared dual-color focal-plane arrays was investigated. It was found that a high ultraviolet photo response can be achieved for Pt/CdS Schottky junction under an ultrathin Pt top contact. Fur- ther simulations show that the ultrathin top contact can efficiently couple the infrared radiation for the dual-color focal-plane array detector. The center to center spacing of each pixel of 50 tzm in the ultraviolet and infrared dual- color focal-plane array detector based on Pt/CdS and InSb junctions can significantly reduce crosstalk. Our work provides fundamental guidance for optimization and design of ultraviolet and infrared dual-color detector.

关 键 词：紫外—红外双色焦平面阵列 Pt/CdS紫外探测器 InSb红外探测器 

分 类 号：O472.8[理学—半导体物理]