基于IGBT模块饱和压降温度特性的结温探测研究  

Junction Temperature Detection Research of IGBT Module Based on Temperature Characteristic of Saturation Voltage Drop

作　　者：姚芳[1] 王少杰[1] 李志刚[1] 

机构地区：[1]河北工业大学电气工程学院,天津300130

出　　处：《电子器件》2017年第2期291-295,共5页Chinese Journal of Electron Devices

基　　金：国家科技支撑计划项目(2015BAA09B01);国家自然科学基金项目(51377044);河北省科技计划项目(13214303D;14214503D)

摘　　要：实验室条件下,IGBT模块的结温探测是瞬态热阻抗测试的关键。首先分别在热稳态和热瞬态下证明了饱和压降温度特性只与芯片有关,然后建立了IGBT模块结温探测模型,利用饱和压降值和集电极电流值来计算结温值,并将用模型计算出的结温与光纤实测的结温相比较,吻合性良好,证明了模型计算法能够准确探测结温。该方法可以用于恒流加热过程中瞬态热阻抗的测量,比起热敏参数法中冷却过程测量瞬态热阻抗相比,更具有实际意义。The junction temperature detection of IGBT is the key to the transient thermal impedance test under laboratory condition.First,to prove the saturation voltage drop temperature characteristic is only related to the chip under the thermal steady state and the thermal transient state respectively.Then to establish the junction temperature detection model of IGBT only uses the saturation voltage drop values and the collector current values to detect junction temperature values.Compared the calculated junction temperature with measured junction temperature using optical fiber,two kinds of temperature coincide very well,it is proved that the calculated method can accurately detect the junction temperature.The calculated method can be used in measuring transient thermal impedance in the heating process of constant current.Compared with the thermal parameter method measuring in the cooling process the method has more significance in practice.

关 键 词：IGBT 结温探测 温度特性 饱和压降 

分 类 号：TN32[电子电信—物理电子学]