基于栅极电感反馈的CMOS差分Vacker VCO设计  

Design of a CMOS Differential Vackar VCO with the Gate Inductive Feedback

作　　者：罗永刚[1] 

机构地区：[1]山东理工大学电气与电子工程学院,山东淄博255049

出　　处：《电子器件》2017年第2期312-316,共5页Chinese Journal of Electron Devices

基　　金：2013年山东省淄博市科学技术发展计划项目(2013GG02104)

摘　　要：提出了一种基于栅极电感反馈的Vacker压控振荡器(VCO),该结构能够改善电路的负阻抗,进而使得电路易于起振。对晶体管的负载效应和振幅稳定性的分析表明,该Vacker VCO相比较于Colpitts VCO,具有更好的振幅稳定性,进而改善了VCO的相位噪声。基于0.13μm RF CMOS工艺,对该Vacker VCO进行了设计与芯片实现,测试结果表明:在消耗4.2 mW功耗的前提下,该VCO振荡频率为11 GHz～12.6 GHz,在11.8 GHz振荡频率处,相位噪声为-115.1 dBc/Hz@1 MHz,品质因数FOM指标达到-190.3 dBc/Hz。This brief presents a CMOS differential Vackar voltage-controlled oscillator（VCO）with gate inductive feedback which enhances negative impedance and thus simplifies the startup condition.Simple analysis examines the transistor loading effect and amplitude stability.Results indicate that the Vackar VCO has improved amplitude stability compared to the Colpitts VCO.The improved amplitude stability is favorable for reducing phase noise.The Vackar VCO was implemented in a 0.13μm RF CMOS process.Measured results shows that the proposed VCO exhibits a operation frequency range from 11 to 12.6 GHz,a phase noise of-115.1 dBc/Hz at an offset of 1 MHz from an oscillation frequency of 11.8 GHz and a figure of merit of -190.3 dBc/Hz while dissipating 4.2 mW.

关 键 词：Vackar压控振荡器 电感反馈 低相位噪声 品质因数 

分 类 号：TN432[电子电信—微电子学与固体电子学]