LED电极结构优化设计与仿真计算  

Optimization Design and Simulation Calculation of LED Electrode Structure

作　　者：吕家将[1] 郑晨居 周圣军[1] 刘胜[1] 

机构地区：[1]武汉大学动力与机械学院,武汉430072

出　　处：《半导体光电》2017年第4期483-487,共5页Semiconductor Optoelectronics

基　　金：国家自然科学基金项目(重大项目U1501241);国家"863"计划项目(2015AA03A101)

摘　　要：LED电极结构极大地影响着LED芯片的电流扩展能力,优化电极结构,能够缓解电流拥挤现象。讨论了正装LED结构和倒装LED结构的电流分布模型,并通过SimuLED软件研究了电极结构对LED电流扩展能力的影响。仿真结果表明:采用插指型电极结构极大提高了正装LED的电流扩展能力,电极下方插入电流阻挡层(CBL)后改变了芯片的电流分布状况,有利于光效的提升;而倒装LED的通孔式双层金属电极结构利用两层金属的互联作用,使n电极能够在整个芯片范围内均匀分布,进一步提高了电流扩展性能。The geometric topology of electrodes has been reported to have much impact on the current spreading and subsequent optoelectronic characteristics. And the current crowding phenomenon can be greatly relieved by optimizing the electrode pattern. In this paper, the current distribution models featuring top-emitting LED and flip-chip LED were discussed. The effect of different electrode patterns on the performance of current spreading was further investigated through the simulation with commercial SimuLED software. The simulation results showed that the current spreading capability of the top-emitting LED with fingerlike electrode pattern was greatly increased, which also enhanced the current distribution and luminous efficiency by inserting current blocking layer under the electrode. The current spreading capability of flip-chip LED was enhanced by the via-hole based double layer electrode structure, which enabled the uniform distribution of n-type electrode on the entire chip range.

关 键 词：发光二极管 电极结构 电流扩展 通孔式电极 电流分布模型 

分 类 号：TN312.8[电子电信—物理电子学]