一种具有大电流驱动能力的低温漂带隙基准电压源  

A Low Temperature Coefficient Bandgap Voltage Reference with Strong Current Driving Capability

作　　者：尹洪剑[1] 万辉[2] 高炜祺[2] 

机构地区：[1]重庆电子工程职业学院应用电子学院,重庆401331 [2]中国电子科技集团公司第二十四研究所,重庆400060

出　　处：《微电子学》2017年第4期461-464,共4页Microelectronics

摘　　要：基于XFAB 0.6μm CMOS工艺,设计了一种具有大电流驱动能力的低温度系数带隙基准电压源。通过设置不同温度系数的电阻的比值,实现带隙基准的2阶曲率补偿。采用新的电路结构,使基准源具有驱动10 m A以上负载电流的能力。经过Hspice仿真验证,常温基准输出电压为2.496 V,-55℃～125℃温度范围内的温度系数是3.1×10^(-6)/℃;低频时,电源电压抑制比为-77.6 d B;供电电压在4～6 V范围内,基准输出电压的线性调整率为0.005%/V;负载电流在0～10m A范围内,基准输出电压波动为219μV,电流源负载调整率为0.022 m V/m A。Based on XFAB 0. 6 μm CMOS technology,a low temperature coefficient bandgap voltage reference with strong current driving capability was proposed. The 2nd-order curvature compensation of the bandgap voltage reference was achieved by setting the ratio of resistances with different temperature coefficient. The ability of the voltage reference of driving more than 10 m A load current was achieved by designing a new circuit structure.It had been simulated and verified with Hspice.It had achieved an output voltage of 2. 496 V at room temperature,a temperature coefficient of 3. 1×10^（-6）/℃in the temperature range of-55 ℃ ~ 125 ℃,a PSRR of-77. 6 d B at low frequency,a linear regulation of 0. 005%/V in the power supply voltage range of 4 V to 6 V,a load current regulation of 0. 022 m V/m A with a load current range of 0 to10 m A in which the change of the reference output voltage was 219 μV.

关 键 词：带隙基准 曲率补偿 电流驱动 

分 类 号：TN432[电子电信—微电子学与固体电子学]