基于SRAM型FPGA单粒子效应的故障传播模型  

SRAM-Based FPGA SEU Fault Propagation Model

作　　者：吴珊[1] 周学功[1] 王伶俐[1] 

机构地区：[1]复旦大学专用集成电路与系统国家重点实验室,上海201203

出　　处：《电子学报》2017年第8期1976-1984,共9页Acta Electronica Sinica

基　　金：国家自然科学基金(No.61131001)

摘　　要：SRAM型FPGA在辐射环境中易受到单粒子翻转的影响,造成电路功能失效.本文基于图论和元胞自动机模型,提出了一种针对SRAM型FPGA单粒子效应的电路故障传播模型.本文将单粒子翻转分为单位翻转和多位翻转来研究,因为多位翻转模型还涉及到了冲突处理的问题.本文主要改进了耦合度的计算方式,通过计算FPGA布局布线中的相关配置位,从而使得仿真的电路故障传播模型更接近于实际电路码点翻转的结果,与以往只计算LUT相关配置位的方法比较,平均优化程度为19.89%.最后阐述了本模型在故障防御方面的一些应用,如找出最易导致故障扩散的元胞.SRAM-based FPGA（ Field Programmable Gate Array） could be affected by SEU（ Single Event Upset） in radiation environment,causing circuit function failures. This paper proposes an SEU-induced fault propagation model for FPGAs based on the graph theory and the cellular automata. In addition,this paper divides SEU effect into two parts： SBU（ Single-Bit Upset） and MBU（ Multi-Bit Upset） because MBU has an extra problem about conflict management. The core part of this model is the computing method of the coupling degree which is based upon relative bits from FPGA placement and routing results to make the model more accurate. After validation between fault propagation model and fault injection experiment,this fault propagation model is 19. 89% more relative to fault injection experiment than the fault propagation model only counting relative bits in LUT（ Look Up Table）. Finally,this paper analyses an application about this model to find cells most easily leading to fault diffusion.

关 键 词：现场可编程门阵列 单粒子翻转 单位翻转 多位翻转 电路故障传播模型 

分 类 号：TN47[电子电信—微电子学与固体电子学]