栅电荷测试方法研究  

The Research on Gate Charge Test Method

作　　者：张文涛[1] 

机构地区：[1]中国电子科技集团公司第四十七研究所,沈阳110032

出　　处：《微处理机》2017年第4期4-6,共3页Microprocessors

摘　　要：近年来,功率半导体器件的应用领域不断扩展,对技术指标的要求日益提高。栅电荷是功率MOSFET动态特性的重要参数,在军用功率MOSFET器件研制、生产和使用过程中,对作为关键参数的栅电荷提出了更高的要求,该参数直接影响器件的整体性能,其测试结果与时间和频率有关,受分布参数、测试夹具和电路结构等因素影响较大。从栅电荷的定义着手,介绍了栅电荷的测试方法,比对国内外不同测试系统对栅电荷的测试结果,针对数据差异进行技术分析,为国内的栅电荷测试提供一定的参考和指导作用。In recent years, the application fields of Power Semiconductor Device are extended, the technical requirements are increasingly improved. Gate charge is an important dynamic parameter of Power MOSFET. In the process of research,production and application for military Power MOSFETs, gate charge, as a major parameter, requires a higher demand. This parameter effects the overall performance of device directly, and its test result is related to time and frequency,which can be affected greatly by test fixture and circuit structure. This paper sets about the definition of gate charge, introduces its test method, compares the test results between different test systems, analyzes on different test resuhs, and provides references and guidance for gate charge testing.

关 键 词：栅电荷 功率 测试 频率 电压 电容 

分 类 号：TN307[电子电信—物理电子学]