存储测试系统中FLASH的存储可靠性技术研究  

Research on stored reliability technology of FLASH in storage testing system

作　　者：高阳[1] 王代华[1] 王晓楠[1] 

机构地区：[1]中北大学仪器科学与动态测试教育部重点实验室,山西太原030051

出　　处：《现代电子技术》2017年第18期131-134,138,共5页Modern Electronics Technique

基　　金：国家自然科学基金面上项目(51575499)

摘　　要：NAND FLASH存储器具有非易失性、存储容量大和读写速度快等优点,在存储测试领域的应用越来越广泛。由于NAND FLASH存储器中不可避免会出现无效块,传统的管理方法是将无效块映射表存放在FLASH存储器中,可靠性低,对数据存储速度和可靠性都会造成不利影响。针对这些问题,提出了基于外置存储数据位的无效块快速检索架构,将无效块映射表存放在可靠性高的铁电存储器中;引入计算机网络中的滑动窗口原理,建立了基于滑动窗口的无效块预匹配机制,在不影响FLASH存取速度的情况下可无时延地生成有效块地址。经分析和论证,这种架构对NAND FLASH存储数据的可靠性和存取速度有很大的提升,提高了存储测试系统的整体性能。The NAND FLASH has versatile features such as nonvolatile, large storage capacity and fast read-write speed, and is widely used in the field of stored measurement, but the low reliability of the invalid block mapping table has a bad influence on storage speed and reliability because invalid blocks may ineluctably appear in NAND FLASH memory and the traditional in- valid block management methods put the table in the FLASH memory. For these problems, invalid block information fast retriev- al architecture based on external storage data bits is proposed, with which the invalid block mapping table can be put in high-re- liability FRAM. The sliding window principle is imported into computer network to establish an invalid block pre-matching mech- anism based on the sliding window, by which the effective block address can be generated without delay while FLASH storage access speed does not be affected. The analysis and argument results indicate this architecture can improve the reliability and ac- cess speed of NAND FLASH stored data greatly, and the overall performance of storage testing system.

关 键 词：NAND FLASH 无效块管理 存储测试 铁电存储器 

分 类 号：TN911.34[电子电信—通信与信息系统] TM932[电子电信—信息与通信工程]