高性能栅压自举开关的设计  

Design of High Performance Bootstrapped Switch

作　　者：穆敏宏 叶凡[1] 陈勇臻[1] 

机构地区：[1]复旦大学微电子学院专用集成电路与系统国家重点实验室,上海201203

出　　处：《半导体技术》2017年第9期663-668,共6页Semiconductor Technology

摘　　要：对模数转换器中的传统开关电路的导通电阻进行了详细的理论分析,提出了一种互补型栅压自举开关电路。该电路结构相比于传统开关,通过少量的功耗代价换取了更优的频域性能,在不同工艺角下具有更好的鲁棒性,适用于先进工艺下的低电压工作环境。互补型栅压自举开关电路采用28 nm工艺设计,在1 V的电源电压下,对800 f F的负载电容进行速率为800 MS/s的采样,在低频输入下(181.25 MHz)实现的无杂散动态范围(SFDR)为89 d B,四倍奈奎斯特输入频率下(1 556 MHz)实现的SFDR为65 d B,开关电路面积为80μm×20μm。The on-resistance in conventional switching circuit for analog-to-digital converter（ ADC） was analyzed,a complementary bootstrapped switch circuit was proposed. Comparing to the traditional switch,the proposed circuit structure has a better frequency domain performance with an addition small cost of power consumption. The robustness of the switch is also improved under different process corner,and the switch can be used in low voltage power supply in advanced process. The complementary boostrapped switch is implemented in 28 nm process with an 1 V power supply,and the switch is simulated with a 800 MS/s sample rate and a 800 f F load capacitance. The spurious free dynamic range（ SFDR） is 89 dB with an 181. 25 MHz input signal and 65 dB with an 1 556 MHz（ four times Nyquist frequency） input signal respectively,and occupies an active area of 80 μm× 20 μm.

关 键 词：模数转换器(ADC) 栅压自举采样开关 互补型开关 导通电阻 沟道电荷注入 

分 类 号：TN402[电子电信—微电子学与固体电子学]