As掺杂p型碲镉汞材料的研究进展  

Research progress of p-type As doped HgCdTe material

作　　者：宋淑芳[1] 田震[1] 

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《激光与红外》2017年第9期1059-1062,共4页Laser & Infrared

摘　　要：非本征p型掺杂碲镉汞材料可以有效克服少子寿命偏低等问题,提高长波和甚长波红外焦平面器件的性能。本文重点阐述了As掺杂实现p型掺杂的基础性原理,以及在器件方面最新研究进展,为今后As掺杂碲镉汞材料的研究提供依据。As the extnnsic p-type doped HgCdTe material has the high minority carrier lifetime,it can effectively im- prove the performance of long wave infrared or very long wave infrared HgCdTe detector. The basic theory of As doped p-type HgCdTe was expounded, and research progress of p-on-n infrared detector was introduced, which provides a certain reference for the research of As doped p-type HgCdTe material.

关 键 词：P型掺杂 碲镉汞 红外焦平面 

分 类 号：TN213[电子电信—物理电子学]