Application research on the sensitivity of porous silicon  被引量:1

Application research on the sensitivity of porous silicon

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作  者:Gaobin Xu Ye Xi Xing Chen Yuanming Ma 

机构地区:[1]Micro Electromechanical System Research Center of Engineering and Technology of Anhui Province,School of Electronic Science&Applied Physics,Hefei University of Technology,Hefei 230009,China

出  处:《Journal of Semiconductors》2017年第9期48-55,共8页半导体学报(英文版)

摘  要:Applications based on sensitive property of porous silicon (PSi) were researched. As a kind of porous material, the feasibility of PSi as a getter material was studied. Five groups of samples with different parameters were prepared. The gas-sensing property of PSi was studied by the test system and suitable parameters of PSi were also discussed. Meanwhile a novel structure of humidity sensor, using porous silicon as humidity-sensitive material, based on MEMS process has been successfully designed. The humidity-sensing properties were studied by a test system. Because of the polysilicon layer deposited upon the PSi layer, the humidity sensor can realize a quick dehumidification by itself. To extend service life and reduce the effect of the environment, a passivation layer (Si3N4) was also deposited on the surface of electrodes. The result indicated the novel humidity sensor presented high sensitivity (1.1 pF/RH%), low hysteresis, low temperature coefficient (0.5%RH/℃) and high stability.Applications based on sensitive property of porous silicon (PSi) were researched. As a kind of porous material, the feasibility of PSi as a getter material was studied. Five groups of samples with different parameters were prepared. The gas-sensing property of PSi was studied by the test system and suitable parameters of PSi were also discussed. Meanwhile a novel structure of humidity sensor, using porous silicon as humidity-sensitive material, based on MEMS process has been successfully designed. The humidity-sensing properties were studied by a test system. Because of the polysilicon layer deposited upon the PSi layer, the humidity sensor can realize a quick dehumidification by itself. To extend service life and reduce the effect of the environment, a passivation layer (Si3N4) was also deposited on the surface of electrodes. The result indicated the novel humidity sensor presented high sensitivity (1.1 pF/RH%), low hysteresis, low temperature coefficient (0.5%RH/℃) and high stability.

关 键 词:porous silicon MEMS humidity sensor gas sensing 

分 类 号:TP212[自动化与计算机技术—检测技术与自动化装置] TN304.12[自动化与计算机技术—控制科学与工程]

 

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