铜表面不同方法制备石墨烯膜的抗氧化性能  

Oxidation Resistance of Graphene Film Prepared by Different Methods on Copper Surface

作　　者：陈斯[1] 曾效舒[1] 

机构地区：[1]南昌大学机电工程学院,南昌330031

出　　处：《机械工程材料》2017年第9期48-52,共5页Materials For Mechanical Engineering

基　　金：江西省科技厅攻关资助项目(z02727);南昌大学分析测试中心测试基金项目资助项目(201203)

摘　　要：采用氧化还原法、化学气相沉积(CVD)法以及两者结合的方法在基底铜箔表面制备石墨烯膜,并进行了氧化处理,对不同试样在氧化前后的表面形貌、物相组成、氧化速率等进行了对比,探讨了不同石墨烯膜的抗氧化性能。结果表明:氧化后,Cu试样、Cu+r-GO(还原氧化石墨烯)试样、Cu+GP(氧化石墨烯)试样的表面均有CuO和Cu_2O的生成,而Cu+GP/r-GO试样的表面未发现氧化物;在相同的氧化时间下,Cu试样的氧化速率最大,Cu+r-GO试样的氧化速率大于Cu+GP试样的,而Cu+GP/r-GO试样几乎不被氧化;GP/r-GO膜的抗氧化性能最好。Graphene film was prepared on surface of copper foil substrate by oxidation-reduction method,chemical vapor deposition（CVD）method and the combination of both methods and applied oxidation process.The surface morphology,phase composition and oxidation rate of different samples before and after oxidation were compared and the oxidation resistance of different graphene film was studied.The results show that CuO and Cu_2O were found on the surface of Cu sample,Cu＋r-GO sample and Cu＋GP sample after oxidation.There was not any oxide on the surface of Cu＋GP/r-GO sample.During the same oxidation time,Cu sample had the maximum oxidation rate and oxidation rate of Cu＋r-GO sample was greater than that of Cu＋GP sample.Cu＋GP/r-GO sample was almost not oxidized.GP/r-GO film had the best oxidation resistance.

关 键 词：铜箔 石墨烯膜 抗氧化性能 

分 类 号：O613[理学—无机化学]