锑基高工作温度红外探测器研究进展  

Status of Sb-based HOT Infrared Detectors

作　　者：邓功荣[1] 赵鹏[1] 袁俊[1] 信思树[1] 龚晓霞[1] 黎秉哲 马启[1] 杨文运[1] 普朝光[1] 

机构地区：[1]昆明物理研究所,云南昆明650223

出　　处：《红外技术》2017年第9期780-784,共5页Infrared Technology

基　　金：云南省应用技术基础研究基金项目(201701PF00015)

摘　　要：锑基红外光敏材料具有优越的光电转换效率,材料结构稳定、可生产性强,并具备低暗电流和高工作温度(HOT)的优势,符合未来红外探测系统小尺寸、轻重量、低功耗(SWa P)的要求。目前,工程化研制高工作温度红外探测器的锑基材料主要有3类:InSb、锑基II类超晶格和InAsSb,国外已报道了640×512、1024×1024和2040×1156规格的焦平面阵列,工作温度提高到150 K以上。本文从材料特性和器件结构、像元尺寸及工艺技术来阐述国内外锑基高工作温度红外探测器的研究状况。Antimony-based infrared photosensitive materials possess the advantages of superior photoelectric conversion efficiency, high structural stability, high yield, low dark current, and high operating temperature （HOT）.These characteristics make them especially suitable for future infrared detection systems that should fulfill the requirements of small size, lightweight, and low power consumption. Currently, three main categories of antimony-based materials are used in HOT infrared detectors viz., InSb, antimony-based type Ⅱ super lattice, and InAsSb. It has been reported that focal plane array sizes of 640× 512, 1024× 1024, and 2040 ×1156 have led to an increase in the operating temperature to greater than 150 K. This article gives an overview of the status of research （national as well as international）on HOT infrared detectors, with special focus on the material properties, device structures, pixel size, and fabrication techniques.

关 键 词：高工作温度(HOT) SWa P In As SB In SB II类超晶格 

分 类 号：TN216[电子电信—物理电子学]