532 nm平顶激光光束用于硅晶圆开槽的研究  

Study on 532-nm Flattened Laser Beam for Silicon Wafer Grooving

作　　者：李海鸥[1] 韦春荣[1] 王晓峰[2,3] 张紫辰 潘岭峰[2] 

机构地区：[1]桂林电子科技大学广西精密导航技术与应用重点实验室,广西桂林541004 [2]中国科学院微电子研究所微电子设备技术研究室,北京100029 [3]中国科学院半导体研究所半导体集成技术工程中心,北京100083 [4]清华大学精密仪器系微纳制造器件与系统协同创新中心精密测试技术及仪器国家重点实验室,北京100084

出　　处：《激光与光电子学进展》2017年第9期254-260,共7页Laser & Optoelectronics Progress

基　　金：国家自然科学基金(61376083);中国科学院装备研制项目;广西自然科学基金(2016GXNSFDA380021)

摘　　要：根据衍射原理,设计并制备了平顶整形元件,将激光能量由高斯分布转变为平顶分布。利用532nm脉冲激光进行了硅晶圆激光划片实验,研究了激光能量、划片速度及聚焦位置对划片效果的影响。结果表明,基于平顶光束的激光划片,可实现宽约为16μm、深约为18μm的划槽,且槽底部平坦,槽壁陡直;与高斯光束相比,平顶光束下热影响区明显减小。According to the diffraction principle,a flattened shaping element is designed and prepared,which converts a Gaussian distribution of laser energy to a flat-top distribution.The laser dicing test of silicon wafers is carried out by using the 532 nm pulsed laser and the influences of laser energy,dicing speed and focusing position on the wafer cutting effect are investigated.The results show that based on the laser dicing by flattened beams,a groove with a width of about 16μm and a depth of about 18μm can be obtained,whose bottom is flat and wall is steep.In addition,the heat affected zone under the flattened beam is obviously smaller than that under the Gaussian beam.

关 键 词：激光技术 脉冲激光 激光划槽 平顶整形 硅片 热影响区 

分 类 号：TN249[电子电信—物理电子学]