离子注入技术在光解水电极材料改性中的应用  

Application of ion beam technology in modification of photoelectrode

作　　者：王雪凝 任峰[1] 吴恒毅 刘艺超[1] 吴亮 蒋昌忠[1] 

机构地区：[1]武汉大学物理科学与技术学院武汉大学离子束功能材料研究中心,武汉430072

出　　处：《科学通报》2017年第25期2893-2904,共12页Chinese Science Bulletin

基　　金：国家自然科学基金(11522543;11475129;51571153);江苏省自然科学基金(BK20161247;BK20141212);湖北省自然科学基金(2016CFA080)资助

摘　　要：半导体光催化分解水制氢是一种装置简单,相对廉价可靠的能源利用方式.开发具有高光制氢效率的光电极材料一直是材料科学研究领域的热点.目前的半导体光催化材料普遍面临缺乏可见光吸收和载流子分离效率低的问题.这些问题导致目前光解水制氢电极材料的效率较低,达不到商业应用的要求.因此,发展改性的光电极材料尤为重要.离子注入技术作为一种重要的半导体改性技术,相对于传统的化学掺杂方法具有诸多优点.离子注入方法能够保证注入离子的纯度,能够通过控制注入离子的能量和剂量从而控制注入杂质的浓度和深度分布.离子注入技术可以使掺杂不受扩散系数和化学结合力等因素的限制,各种元素均可掺杂.因此,离子注入技术在光电极材料改性方面具有很大的应用前景.本文首先介绍了光解水制氢及离子注入技术的基本原理,然后结合本课题组及其他学者的工作,综述了目前离子注入技术改性光电极材料的特点和研究进展,最后展望了离子注入技术在光解水电极改性应用的未来发展方向.Semiconductor-based photoelectrolysis for water splitting to produce hydrogen and oxygen is a simple,relatively cheap and reliable way for energy utilization.Therefore,developing photoelectrode materials with high solar-to-hydrogen（STH） efficiency has become a hotspot in the field of material science.Many semiconductor-based photoelectrolysis suffer from the lack of visible light response and low charge separation efficiency resulting in low photoelectrocatalytic activity.It is particularly important to developing modified photoelectrode materials.Ion beam technology,as an important semiconductor modification technology,has been generally used to modify the electronic property of silicon.It has great potential application in modification of photoelectrode materials.Comparing with traditional modification method,ion beam technology has many advantages,such as good repeatability and controllability.Ion beam technology is an effective method for doping.Various ion species can be doped into photoelectrode materials.The ion implantation process could ensure the uniformity and purity of the introduced elements in materials.Doped ions can be highly dispersed and present at the lattice positions deeply inside the film.Basing on the works of our and other research groups,this review briefly introduces the advantages,the recent progress,and the current issues of application of ion beam technology in modifying photoelectrode materials.Ion beam technology has been used to effectively improve visible light absorption of many photoelectrode materials.TiO_2 doping through metal ion implantation has been studied since 1998.Various metal ion implantations have been found to be effective in improving material＇s visible light response.Compared with metal ion implantation,only few examples of nonmetal implantation are known.Since 2005,N ion implantation was reported to be effective to improve photoelectrochemical（PEC） properties of TiO_2,ZnO,WO_3.Ion implantation is proven to be effective and reliable method of doping.In a

关 键 词：光解水制氢 离子注入技术 能源材料 太阳能 离子束材料改性 

分 类 号：TB34[一般工业技术—材料科学与工程] TQ116.2[化学工程—无机化工]