Effects of Al Impurities on the Structural, Morphological, and Optical Properties of High Mg Content MgZnO Thin Films by Reactive Sputtering  

作　　者：张丹 季旭 吕佩文 黄丰 

机构地区：[1]Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences [2]State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, Sun Yat-sen University

出　　处：《Chinese Journal of Structural Chemistry》2017年第8期1271-1275,共5页结构化学（英文）

基　　金：financially supported by the National Natural Science Foundation of China(No.61427901,61306065)

摘　　要：Al impurities modulated hexagonal wurtzite MgZnO nanocrystalline（AlMgZnO） film with a band gap of 4.3 e V was deposited on the c-plane sapphire substrate via radio frequency sputtering. The high quality deep UV AlMgZnO without phase segregation is an ideal material for the fabrication of UV-C devices due to its wide band gap and easy preparation. As a complicated quaternary system, AlMgZnO is found to have better crystal quality than the MgZnO film with high Mg content. Therefore, Al impurities must play important roles in the structural, morphological and optical characteristics of MgZnO films, such as realizing the suppression of phase separation, the promotion of crystalline quality as well as the facilitation of oriented growth and nanocrystalline transformation of MgZnO film.Al impurities modulated hexagonal wurtzite MgZnO nanocrystalline（AlMgZnO） film with a band gap of 4.3 e V was deposited on the c-plane sapphire substrate via radio frequency sputtering. The high quality deep UV AlMgZnO without phase segregation is an ideal material for the fabrication of UV-C devices due to its wide band gap and easy preparation. As a complicated quaternary system, AlMgZnO is found to have better crystal quality than the MgZnO film with high Mg content. Therefore, Al impurities must play important roles in the structural, morphological and optical characteristics of MgZnO films, such as realizing the suppression of phase separation, the promotion of crystalline quality as well as the facilitation of oriented growth and nanocrystalline transformation of MgZnO film.

关 键 词：MGZNO deep UV radio frequency sputtering 

分 类 号：TB383.2[一般工业技术—材料科学与工程]