AlGaInAs/InP多量子阱激光器的量子阱数的优化  

Quantum well number optimization of AlGaInAs/InP Multi Quantum well

作　　者：尹晋宏 贾华宇[2] 李灯熬[2] 罗飚 刘应军 

机构地区：[1]太原理工大学物理与光电工程学院,晋中030600 [2]太原理工大学信息工程学院,晋中030600 [3]武汉电信器件有限公司,武汉430074

出　　处：《激光杂志》2017年第9期9-13,共5页Laser Journal

基　　金：国家863计划课题(2015AA016901);山西省自然科学基金项目(2015011050)

摘　　要：为了研制符合"国家863"项目要求的,满足高线性大功率直接调制应变多量子阱半导体激光器,对AlGaInAs/InP应变多量子阱激光器的有源区的量子阱数及芯片生长工艺进行了研究。根据求解速率方程组、计算载流子浓度分布,分析瞬态过程和稳态过程,得出理论最优阱数,再在最优阱数下对比不同温度下的激光器的各项性能指标,得出最佳温度值。基于ALDS软件模拟建立了AlGaInAs/InP仿真模型,模拟结构输入、材料求解、阈值分析、性能计算等。讨论了不同量子阱个数、不同温度对器件稳态、大小信号、噪声等的影响。结果表明,当阱组分为Al_(0.24)Ga_(0.23)In_(0.53)As,阱宽为3.3nm,垒宽为8.1nm,阱数为10,温度为25℃,本激光器各项性能指标均为最优,阈值电流达13.40mA,输出功率为5.6mW。In order to get the directly modulated multi quantum well laser with high linearity and high power, the number of quantum wells in active region of AlGalnAs/InP quantum well, chip growth process and the work temperature have been investigated. The optimal number of quantum wells was obtained by solving the rate equations, calculating the distribution of carrier concentration, and analyzing the transient and the steady state processes. The simulation model of AlGalnAs/InP was built based on ALDS to simulate structural input, material solver, threshold analysis and performance computation. The influence of quantum well number and the different temperature on steady device state, signal value and noise value were also discussed. It has indicated that the laser got the optimal performance with threshold current of 13.40 mA and output power of 5.6 mW when it possessed quantum well components of Al0.24Ga0.23In0. 53As, quantum well width of 3.3 nm, barrier width of 8. 1 nm, and quantum well number of 10, Temperature is 25℃ respectively.

关 键 词：多量子阱 激光器 量子阱数 器件模拟 

分 类 号：TN248.4[电子电信—物理电子学]