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出 处:《核电子学与探测技术》2017年第3期302-307,共6页Nuclear Electronics & Detection Technology
摘 要:研究推导出了发射体采用圆柱体拉丝工艺的β衰变自给能中子探测器灵敏度计算公式和β电子在绝缘层内的逃逸因子(K_g)计算公式。计算绘制了绝缘层与K_g的关系曲线。研究发现文献[1]提供的K因子图存在偏差,不适合直接应用于探测器研发。计算给出了相同机械尺寸的钒和铑探测器在恒定中子场内灵敏度随累积中子照射时间变化趋势曲线,参考堆芯中子通量分布仿真结果提出灵敏度修正需考虑堆芯轴向中子通量分布影响的观点。Study of the β decay self - powered neutron detector which emitter with cylinder drawing technics, gives the derivation formulas used to calculate detector sensitivity and beta electron escape factor in the insulator (Kg ). The relation curve between insulator and Ks was calculated and drawn. The study found that the K factor graph provided by the reference document has some deviation, not suitable for application in the detector research and development directly. The trend curves of the same mechanical size vanadium and rhodium detectors'sensitivity with cumulative irradiation time at the same constant neutron field were calculated and drawn. Putting forward the detector sensitivity correction should be considered the axial neutron flux distribution influence that according to the core neutron flux distribution simulation results.
分 类 号:TL816.3[核科学技术—核技术及应用]
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