磁控溅射阴极靶的伏安特性对Ti薄膜结构及性能影响  

Effect of cathode target voltammetry characteristic by magnetron sputtering on microstructure and properties of Ti film

作　　者：王迪 蒋百灵[1,2] 杨超[1] 黄蓓 

机构地区：[1]西安理工大学材料科学与工程学院,陕西西安710048 [2]南京工业大学材料科学与工程学院,江苏南京211816

出　　处：《金属热处理》2017年第9期183-186,共4页Heat Treatment of Metals

基　　金：国家自然科学基金(51271144)

摘　　要：通过在不同的磁控溅射阴极靶电源供给模式下制备纯Ti薄膜,并采用扫描电镜、X射线衍射、纳米压痕仪及微划痕试验等表征方法对比研究了阴极靶在不同电场模式下对Ti薄膜微观结构、相组成、显微硬度及膜基结合强度的影响。结果表明:相对于直流电场和高功率脉冲电场,通过双脉冲电场模式所制备的纯Ti薄膜具有纳米多晶结构,其晶粒尺寸为17 nm,组织致密,硬度和弹性模量分别达到了3.5 GPa和123 GPa,并且显著提高了与膜基的结合强度。For the Ti films prepared by different modes of cathode target power supply, the influence of different electric field modes of the cathode targets on the microstructure, phase composition, micro-hardness and adhesive strength of Ti films was investigated by means of SEM, XRD, nanoindentation and micro-scratch tests. The results show that the pure Ti films obtained by the mode of dual pulse power electric field （DPP） presents nanometer polycrystaltine structure with the grain size of 17 nm, which compared with the direct current （DC） and high power pulse electric field （HPP） , and the microstructure is much denser than that of DC and HPP modes. In addition, the hardness and the modulus of the film hardness and the modulus of the film reaches 3.5 GPa and 123 GPa, respectively, and the adhesion strength between the film and substrate is obviously improved.

关 键 词：磁控溅射离子镀 热电子发射 离化率 双脉冲电场 

分 类 号：TG14[一般工业技术—材料科学与工程]