基于GaN HEMT同步整流Buck变换器研究  

Research on Synchronous Buck Converter Based on GaN HEMT

作　　者：羊志强 徐大伟[1] 李新昌[1] 程新红[1] YANG Zhi-qiang XU Da-wei LI Xin-chang CHENG Xin-hong(Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China)

机构地区：[1]中国科学院上海微系统与信息技术研究所,上海200050 [2]中国科学院大学,北京100049

出　　处：《电力电子技术》2017年第9期20-23,共4页Power Electronics

基　　金：国家重点研发计划项目(2016YFB0100700);上海市自然科学基金(16ZR1442300)~~

摘　　要：分析了基于氮化镓(GaN)高电子迁移率晶体管(HEMT)同步整流Buck变换器的各部分损耗,并推导出主要损耗的计算公式。针对GaN同步整流管的反向导通特性,分析了死区时间形成过程,设计死区时间调节电路。设计制作基于GaN HEMT和Si MOSFET 10~20V输入、5 V输出、6A最大负载电流及1 MHz开关频率的变换器样机。测试结果表明,在18 V输入时GaN变换器的最高效率为93.9%,比Si变换器约高3%;GaN变换器最优死区时间为5 ns,变换器效率随着死区时间增加而下降。Each part of the losses in synchronous Buck converter based on gallium nitride （GaN） high electron mobili- ty transistor（HEMT） is analyzed.The formulas of main losses are derived.According to the reverse conduction char- acteristic of GaN synchronous rectifier, the formation of dead time is analyzed and the dead time adjusting circuit is designed.Converter prototypes based on GaN HEMT and Si MOSFET are fabricated with the parameters of 10-20 V input, 5 V output, 6 A maximum load current and 1 MHz switching frequency.The measurement results show that the highest efficiency of the GaN converter is 93.9% with 18 V input,which is higher than the Si converter about 3%; optimal dead time for GaN converter is 5 ns and the efficiency of the converter decreases with increase of dead time.

关 键 词：变换器 高电子迁移率晶体管 死区时间 效率 

分 类 号：TM46[电气工程—电器]