三相四线制四桥臂型SiC MOSFET换流器研究  

Research on Four-arm SiC MOSFET Converter in Three-phase Four-wire System

作　　者：李向奎[1] 秦广涛 黄光政[1] 樊相臣 LI Xiang-kui QIN Guang-tao HUANG Guang-zheng FAN Xiang-chen(Jinan Power Supply Bureau,State Grid Shandong Electric Power Grid, Jinan 250000, China)

机构地区：[1]国网济南供电公司,山东济南250000 [2]东北电力大学,吉林吉林132012 [3]国网山东节能服务有限公司,山东济南250000

出　　处：《电力电子技术》2017年第9期42-44,共3页Power Electronics

摘　　要：三相四线制换流器能实现低压配电网三相不平衡等综合电能质量调节,在此结合碳化硅(SiC)金属-氧化物半导体场效应晶体管(MOSFET)对四桥臂型两电平换流器展开深入研究。根据正弦脉宽调制(SPWM)下开关频率及电流波纹的大小来优化设计高频LC滤波器,通过效率分析和热等效电路来选取散热器。通过搭建并测试125 kVA三相四线制SiC MOSFET换流器实验装置来验证不同负载条件下设计合理性和SiC-MOSFET优越性。The three-phase imbalance and other comprehensive power quality problems in secondary distribution net- work can be regulated by the three-phase four-wire converter.The four-arm two-level converter is researched profoundly combined with silicon carbide （SIC） metallic-oxide-semiconductor field-effect transistor （MOSFET）.The high-frequent LC filter is optimally designed by switching frequency and current ripple using sinusoidal pulse width modulation （SP- WM）.The heat sink is selected by the efficiency analysis and thermal equivalent circuit.Finally,the experimental dev- ice of the three-phase four-wire SiC MOSFET rated 125 kVA is built to validate the reasonability of design and the superiority of the SiC MOSFET under different load conditions.

关 键 词：换流器 碳化硅 金属-氧化物半导体场效应晶体管 

分 类 号：TM46[电气工程—电器]