SiC MOSFET磁集成开关电感软开关逆变器研究  

Research on Magnetically Integrated Switch Inductance Soft Switching Inverter Based on SiC MOSFET

作　　者：方晓敏[1] 黄云龙[1] FANG Xiao-min HUANG Yun-long(Quzhou College of Technology, Quzhou 324000, Chin)

机构地区：[1]衢州职业技术学院,浙江衢州324000

出　　处：《电力电子技术》2017年第9期60-63,共4页Power Electronics

基　　金：国家自然科学基金(51177067;50607007);衢州市科技计划项目(2015Y018)~~

摘　　要：采用宽禁带半导体器件和软开关技术可显著改善逆变器效率和功率密度。提出采用碳化硅(SiC)金属氧化物半导体场效应晶体管(MOSFET)的新型磁集成软开关逆变拓扑。重点研究SiC MOSFET零电压开关(ZVS)关断损耗,通过深入探讨SiC MOSFET寄生电容对ZVS实现的影响及等效寄生电容的提取方法,并构建开关电感磁集成动态损耗模型,优化SiC MOSFETZVS的条件,修正器件电压、电流应力公式,获得了更高效的电路设计参数。最后通过一台20 kW SiC MOSFET磁集成开关电感软开关逆变器实验样机证明了理论分析的正确性。The wide band gap semiconductor device and soft switching technology can significantly improve the efficiency and power density of the inverter.A new magnetic integrated soft switching inverter topology using silicon car bide（SiC） metal oxide semiconductor field effect transistor（MOSFET） is proposed.This paper focuses on SiC MOSFET zero voltage switch（ZVS） loss,through in-depth study of SiC MOSFET switch parasitic capacitance effect on zero volt- age, equivalent parasitic capacitance value extraction method, and construct the switch inductance integrated dynamic switch loss model,optimization of SiC MOSFET zero voltage correction device, voltage and current stress formula.The circuit design parameters more efficient.Finally,the correctness of analysis is proved by a SiC MOSFET prototype.

关 键 词：逆变器 半导体器件 磁集成开关电感 寄生电容 

分 类 号：TM464[电气工程—电器]