不同氟源对FTO薄膜结构和性能的影响  

Effect of different fluorine sources on structure and properties of FTO thin films

作　　者：王立坤[1] 郁建元[1,2] 杨静凯 王丽[1] 牛孝友 赵洪力[1] 

机构地区：[1]燕山大学材料科学与工程学院,河北秦皇岛066004 [2]唐山学院环境与化学工程系,河北唐山063000 [3]燕山大学国防科学技术学院,河北秦皇岛066004

出　　处：《燕山大学学报》2017年第4期365-370,共6页Journal of Yanshan University

基　　金：国家重点研发计划资助项目(2016YFB0303902);河北省应用基础研究计划重点基础研究资助项目(17961109D);国家自然科学基金资助项目(51602278);河北省自然科学基金资助项目(E2016203149)

摘　　要：采用喷雾热解法制备了氟掺杂的二氧化锡(fluorine-doped tin oxide,FTO)薄膜,氟源分别为NH_4F、SnF_2、CF_3COOH和HF。采用X射线衍射仪、扫描电子显微镜对薄膜微观结构和表面形貌进行了表征;用四探针电阻仪、霍尔效应仪和紫外分光光度计对薄膜的光电性能进行了分析。结果表明,不同氟源制备的FTO薄膜均为沿(200)方向择优生长的四方金红石结构,掺杂后薄膜的表面形貌较未掺杂时变化较大,由多角状和棱柱状颗粒相间分布变为完全由类金字塔状颗粒堆积而成。四种氟源中,以SnF_2为氟源制备的FTO薄膜的光电性能优于其它氟源,薄膜的最佳电阻率达5.06×10^(-4)Ωcm,载流子浓度为4.850×10^(20)cm^(-3),光学带隙为4.03 eV。不同氟源对FTO薄膜可见光区透过率影响不大,薄膜的平均透过率均大于83%。不同氟源FTO薄膜的性能差异主要由氟的掺杂量决定的。Tin oxide thin films doped with fluorine were deposited by spray pyrolysis. NH4F,SnF2,CF3COOH and HF were used as fluorine sources,respectively. The evolution of the microstructure and surface morphology of the films were characterized by X-ray diffraction（ XRD） and scanning electron microscopy（ SEM）. The photoelectric properties of the films were analyzed by the fourpoint probe,Hall measurements and UV-Vis spectroscopy. The results show that the FTO thin films exhibit a tetragonal cassiterite structure with（ 200） orientation. The morphology of films has a great change by doping with F. The undoped SnO2 thin film is mainly comprised of polygonal particles and prismatic particles,while the FTO thin film is completely composed by pyramidal particles.Among the four fluorine sources,the SnO2 thin film doped with SnF2 obtains better photoelectric properties than others,the values of resistivity,carrier concentration and optical band gap are 5. 06 × 10^-4Ω cm,4. 850 × 1 0^20 cm^-3 and 4. 03,respectively. the effect of fluorine sources on transmittance of the FTO films is trivial with the average transmittance of above 83%. The performance of the FTO films are mainly determined by the doping amount of fluorine.

关 键 词：二氧化锡薄膜 掺杂 氟 喷雾热解 光电性能 

分 类 号：TK412[动力工程及工程热物理—动力机械及工程]