一种用于ASIC内部存储器单粒子翻转效应评估的方法  

A Method for Evaluating the SEU of ASIC Internal Memory

作　　者：郑宏超 岳素格 王亮 简贵胄 初飞 

机构地区：[1]北京微电子技术研究所,北京100076

出　　处：《微电子学与计算机》2017年第10期22-25,共4页Microelectronics & Computer

摘　　要：本文提出了利用存储器内建自测试(MBIST)进行专用集成电路(ASIC)内部存储器的单粒子翻转(SEU)检测方法,研究并制定了MBIST的单粒子有效性辐照注量的统计方案,最后在重离子加速器上应用该方法进行了单粒子试验验证.通过与相同结构的存储器SEU结果的对比分析,结果表明,MBIST在有效辐照注量(1.27E+7icons/cm2)下,与存储器在标准辐照注量(1E+7icons/cm2)下获得的SEU在轨错误率误差小于2倍,运用MBIST方法可以方便、准确地用于评估ASIC的存储器SEU性能指标.This paper presents a new way to evaluate the SEU performance of ASIC internal memory by using Memory-Build-In-Self-Test（MBIST） technology, while an statistical method of effective irradiation dose for MBIST was studied and developed. At last, a SEE verification test was carried out on the heavy ion accelerator by using this method. By comparing with SRAM of the same structure, the results show the error between MBIST（effective irradiation dose 1.27E＋7icons/cm2 ）and SRAM （irradiation dose 1.0E＋ 7icons/cm2 ） is less than 2 times, which means the MBIST method can be used for evaluating the SEU performance of ASIC internal RAM conveniently and accurately.

关 键 词：ASIC SRAM SEU MBIST 

分 类 号：TP302.8[自动化与计算机技术—计算机系统结构]