X波段接收机低噪声放大器设计  

Design of low noise amplifier for X band receiver

作　　者：张诚[1,2] 渠慎奇 章宏 张广场[1,2] 陈琛 

机构地区：[1]中国电子科技集团公司超导电子技术重点实验室,合肥230043 [2]中国电子科技集团公司第十六研究所,合肥230043

出　　处：《低温与超导》2017年第9期88-92,共5页Cryogenics and Superconductivity

摘　　要：设计了一种采用Ga As p HEMT管芯的小型化宽带超低噪声放大器,利用ADS微波仿真软件进行原理图设计、优化。其中管芯采用单电源加电,避免了双电源输入端隔直电容对噪声的引入;另外,电路结构采用电阻负反馈拓展了带宽,同时也增加了电路的稳定性,实现较好的输入输出匹配特性。设计的低噪放在7GHz—10GHz频率范围内噪声系数小于0.7d B,增益大于30d B,输入输出回波损耗小于-10d B。低噪声放大器的尺寸仅为23mm×18mm×10mm。A kind of ultra low noise wideband mini - amplifier with GaAs pHEMT was designed , the schematic diagram of the LNA was designed and optimized with ADS. The chips with single power supply could avoid noise increases due to input bloc- king capacitor relative to double power supply. In addition, negative feedback techniques was used for broadening band width and increasing stability. At 7 - 10GHz, the room temperature noise coefficient was less than 0.7dB, gain was greater than 30dB, input and output return loss was less than - 10dB and the size of the amplifier was just only 23mm × 18mm × 10mm

关 键 词：管芯 超低噪声 小型化 宽带 负反馈 放大器 

分 类 号：TN722.3[电子电信—电路与系统]