Zn掺杂InSb薄膜的电特性  

Electrical Characteristic of Zn Doped InSb Thin Film

作　　者：李英哲 吴勇 姜勇[1] 汪庭文 李武哲 韩明日 

机构地区：[1]北京科技大学材料科学与工程学院,北京100083 [2]金策工业综合大学电子工程系

出　　处：《稀有金属》2017年第9期1012-1018,共7页Chinese Journal of Rare Metals

基　　金：国家自然科学基金青年科学基金项目(51501007);国家科技部重大研究计划(纳米专项)项目(2012CB932702)资助

摘　　要：研究了Zn掺杂InSb蒸镀薄膜杂质浓度和热处理条件对其电性能的影响。InSb薄膜采用三温度法在云母基片上制备,利用蒸镀Zn扩散后进行区熔再结晶的方法掺杂Zn杂质。在进行区熔再结晶时为了防止InSb分解和Sb的蒸发,用磁控溅射方法在InSb薄膜上生长厚度为300 nm的Si O2。测试结果表明最好的热处理条件为Ar气氛温度200℃、熔融区的移动速度1×10-5m·s^(-1)和熔融区通过数3。Zn成为受主,室温下测量Zn掺杂浓度为1.47×1022m-3的InSb薄膜的电子迁移率为5.65 m2·V-1·s^(-1)。Zn的掺杂浓度大于1.47×1022m-3时电子迁移率急剧减少,最大的霍尔常数为385 cm3·C-1。在1.5 T磁场下Zn掺杂浓度为3.16×1022m-3时,InSb薄膜电阻率的相对变化达到最大值为3.63,是未掺杂薄膜的2.46倍。The effect of Zn dopant concentration and various heat treatment conditions on the electrical characteristic of InSb evaporated thin film doped with zinc was studied. InSb thin film was deposited on the mica substrate by 3-temperature method and Zn was doped by evaporation,diffusion and zone melting recrystallization. Si O2 of thickness of 300 nm was deposited on the InSb thin film by magnetic sputtering to prevent the decomposition of InSb and re-evaporation of Sb during recrystallization. The fact that Ar atmosphere temperature of 200 ℃,the moving speed of molten zone of 1 × 10-5m·s-1and the number of pass of molten zone of 3 were the optimum heat treatment conditions was clear from the measurement results. Zn was an acceptor. The electron mobility of InSb thin film,Zn dopant concentration of which was 1. 47 × 1022m-3,measured at room temperature was 5. 65 m2·V-1·s-1. If the Zn concentration was larger than 1. 47 × 1022cm-3,the electron mobility rapidly decreased and the greatest Hall coefficient was 385 cm3·C-1. Under the magnetic field of 1. 5 T,the maximum relative variation of resistivity of InSb thin film with Zn dopant concentration of 3. 16 × 1022m-3 was 3. 63 and this value was 2. 46 times that of non-doped thin film.

关 键 词：INSB薄膜 Zn掺杂 磁阻效应 区熔再结晶 电子迁移率 

分 类 号：TN304.2[电子电信—物理电子学] TN305.3