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作 者:商鹏 卓俊[1] 韦源[1] 谢红刚[1] 陶应龙[1]
机构地区:[1]西北核技术研究所,西安710024
出 处:《现代应用物理》2017年第3期14-18,共5页Modern Applied Physics
基 金:强脉冲辐射环境模拟与效应国家重点实验室基金资助项目(SKLIPR1504)
摘 要:基于粒子输运蒙特卡罗模拟程序PHEN,建立了一种用于模拟γ射线入射闪烁晶体全响应过程的耦合输运计算方法。利用此方法对γ射线入射锗酸铋(BGO)晶体的响应过程进行了模拟计算,得到了能量为0.5~10.0 MeV的γ射线在BGO晶体上的沉积能量、BGO晶体的相对灵敏度以及1 MeVγ射线产生的可见光光子数分布,并将计算结果与用MCNP程序计算的结果及BGO晶体的发射光谱进行了对比分析。结果表明,用两种程序计算的沉积能量的差异小于1%,PHEN程序中经过耦合输运得到的可见光光子数分布与BGO晶体的相对发光特性符合较好,验证了本文方法的合理性和可靠性,为闪烁体探测器参数设计及优化提供了一种有效的数值模拟方法。Based on the particle transportation Monte Carlo simulation program software PHEN,a coupled transportation calculation method for simulating the full response process ofγ-ray incident scintillation crystals has been established.The response ofγ-ray incident to BGO crystal is simulated by using this method.The energy deposition ofγ-ray with energy between 0.5-10.0 MeV in BGO crystal,the relative sensitivity of BGO crystal,and the number distribution of optical photon produced by 1MeVγ-ray are obtained.The calculated results are compared with those calculated by MCNP program,and the results show that the difference in energy deposition calculated by the two programs is less than 1%.In the PHEN program,the number distribution of optical photons is in good agreement with the relative intensity distribution of the scintillation emission spectrum of BGO crystal.The method is proved to be reasonable and reliable,and it provides an effective numerical simulation method for the design and optimization of the scintillator parameters.
分 类 号:TL812[核科学技术—核技术及应用]
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