利用变温瞬态电致发光研究OLED载流子的输运机理  

Study on Carriers Transport Mechanism in OLED by Variable Temperature Transient Electroluminescence

作　　者：袁超 关敏[1] 张杨[1,2] 李弋洋 刘兴昉[1] 刘爽杰[1] 曾一平 

机构地区：[1]中国科学院半导体研究所材料重点实验室,北京100083 [2]中国科学院大学材料科学与光电技术学院,北京100049

出　　处：《发光学报》2017年第10期1321-1326,共6页Chinese Journal of Luminescence

基　　金：国家自然科学基金(61274049;61574140);病毒学国家重点实验室开放基金(2017IOV002);国家重点研发计划(2017YFB0405400;2016YFB0400500)资助项目~~

摘　　要：研究了不同温度下几种结构的有机电致发光器件(OLED)的瞬态电致发光响应特性以及电流密度-电压-亮度特性。研究发现,启亮电压随温度升高而减小的加速度在200 K时出现拐点,且这一数值主要由电子传输层Alq3的迁移率决定。当温度为200 K时,延迟时间td最重要的影响因素是Mo O3空穴注入势垒,随着温度的升高,Δtd逐渐减小,到300 K时基本消失。Vf代表光衰减时间随温度增长的平均速率。Mo O3注入层和电致发光材料Ir(ppy)3都会对载流子的堆积起促进作用。由Mo O3注入层不同引起的ΔVf是0.52μs/K,由电致发光材料Ir(ppy)3不同引起的ΔVf是0.73μs/K。The transient electroluminescence response characteristics at different temperatures and the current density-voltage-luminance（ J-V-L） characteristics of several organic light-emitting devices（ OLEDs） were studied. It is found that the acceleration of the turn-on voltage decreasing with the increase of temperature appears the inflection point at 200 K,and this value mainly depends on the mobility of the electron transport layer Alq3. When the temperature is 200 K,the most important factors of delay time tdis hole injection barrier Mo O3. The tddecreases with the increase of temperature and gradually disappears at 300 K. Vfrepresents the average rate of the fall time increasing with the temperature. Both Mo O3 and Ir（ ppy）3can promote the accumulation of carriers. ΔVfcaused by Mo O3 injection layer is 0. 52 μs/K,and that caused by the electroluminescent material Ir（ ppy）3is0. 73 μs/K.

关 键 词：有机电致发光 瞬态电致发光响应 载流子输运 低温 

分 类 号：TN383.1[电子电信—物理电子学]