GaN基p-i-n和肖特基紫外探测器的响应光谱及暗电流特性  

Spectral Response and Dark Current of p-i-n Type and Schottky Barrier Ga N-based Ultraviolet Detectors

作　　者：易淋凯 黄佳琳 周梅[1] 李春燕[1] 赵德刚[2] 

机构地区：[1]中国农业大学理学院应用物理系,北京100083 [2]中国科学院半导体研究所集成光电子国家重点实验室,北京100083

出　　处：《发光学报》2017年第10期1327-1331,共5页Chinese Journal of Luminescence

基　　金：国家自然科学基金(61474142;21403297;11474355)资助项目~~

摘　　要：研究了p-i-n型和肖特基型Ga N基紫外探测器的响应光谱和暗电流特性。实验发现,随着p-Ga N层厚度的增加,p-i-n型紫外探测器的响应度下降,并且在短波处下降更加明显。肖特基探测器的响应度明显比pi-n结构高,主要是由于p-Ga N层吸收了大量的入射光所致。肖特基型紫外探测器的暗电流远远大于p-i-n型紫外探测器的暗电流,和模拟结果基本一致,主要是肖特基型探测器是多子器件,而p-i-n型探测器是少子器件。要制备响应度大、暗电流小的高性能Ga N紫外探测器,最好采用p-Ga N层较薄的p-i-n结构。The spectral response and dark current of p-i-n type and Schottky barrier Ga N-based ultraviolet detectors are investigated. It is found that the responsivity of p-i-n detectors decreases with increasing thickness of p-Ga N layer in p-i-n structure detectors,and the downward trend of responsivity is more pronounced at shorter wavelength of incident light. The responsivity of the Schottky barrier detector is obviously higher than that of the p-i-n structure,mainly because a lot of incident photons are absorpted in the p-Ga N layer. The dark current of Schottky barrier ultraviolet detectors is far larger than the p-i-n ultraviolet detectors,and the results are basically consistent with the simulations,mainly because the Schottky detectors are majority carrier devices,and p-i-n detectors are minority carrier devices. To fabricate high performance Ga N ultraviolet detectors,it is better to employ p-i-n structure with very thin p-Ga N layer.

关 键 词：Ga N 紫外探测器 响应度 暗电流 

分 类 号：TN304.2[电子电信—物理电子学]