新型等离子束源CVD制备a-Si:H薄膜特性的研究  

Study on the Characteristics of a-Si:H Film Deposited by Novel Plasma Beam Source CVD

作　　者：王堃 黄霞 张月 黄惠良 

机构地区：[1]上海交通大学电子信息与电气工程学院,上海200240

出　　处：《压电与声光》2017年第5期698-701,706,共5页Piezoelectrics & Acoustooptics

基　　金：国家自然科学基金资助项目(61310306053)

摘　　要：采用等离子束源化学气相沉积(CVD)设备制备氢化非晶硅薄膜。使用台阶仪、UV-Vis-NIR分光光度计、X线衍射仪(XRD)及扫描电子显微镜(SEM)等手段表征样品。分析了该设备沉积的薄膜均匀度,并比较了本设备与普通电子束蒸发设备制备的薄膜表面形貌。实验结果表明,当设备功率为300 W,硅烷/氢气流量比为15∶10,设备腔室气压为7×10-5 MPa,上、下线圈电流比为6∶2时,薄膜沉积速率最大。The hydrogenated amorphous silicon thin films were fabricated by the plasma source CVD equipment.The samples were characterized by step profiler,UV-Vis-NIR spectrophotometer,XRD and SEM.The uniformity of the deposited film was analyzed,and the surface morphology of the film prepared by the equipment and the conventional electron beam evaporation equipment was compared.The experimental results show that the film deposition rate is the highest when the power is 300 W,the silane/hydrogen flow ratio is 15∶10,the chamber pressure is 7×10-5 mbar,and the upper and lower coil current ratio is 6∶2.

关 键 词：等离子束源 氢化非晶硅 沉积速率 X线衍射 反射光谱 

分 类 号：TN384[电子电信—物理电子学]