皮秒激光直写还原石墨烯氧化物薄膜的研究  

Study on reduction of graphene oxide films using picosecond laser direct writing

作　　者：刘璇[1] 王鹏波[1] 李必奎 徐国军 王世明[1] 张亚非[2] 

机构地区：[1]上海海洋大学工程学院,上海201306 [2]上海交通大学微纳米科学技术研究院,上海200240

出　　处：《光电子．激光》2017年第10期1096-1100,共5页Journal of Optoelectronics·Laser

基　　金：国家自然基金项目(51005145);上海市科委创新(12ZZ163);国家教育部重点(212056);上海市优秀技术带头人(14XD1424300);国家海洋局可再生能源专项(SHME2013JS01)资助项目

摘　　要：利用皮秒激光直写还原绝缘石墨烯氧化物(GO)薄膜,成功制备了图案化的导电石墨烯。先通过旋涂法制备GO薄膜,再使用皮秒激光进行直写扫描,可以同步实现GO的还原和图案化两个关键步骤。光学显微镜成像显示,还原前后GO颜色发生明显变化,图案结构清晰,分辨率较高。结合拉曼光谱和X光电子能谱(XPS)进行表征分析的结果表明,激光直写区域石墨层缺陷程度和含氧量均明显降低,GO还原程度较高。图案化还原后GO(RP-GO)薄膜电学测试的结果表明,可以通过改变皮秒激光的输出功率对RP-GO的导电性能进行调控。本文技术一次性解决了石墨烯的大规模制备、图案化成形和电学性能调控三大难题,开辟了石墨烯基微电子器件生产制造的新道路。Direct picoseconds（PS） laser writing has been used to reduce the insulated graphene oxide （GO） films, for the preparation of conductive and patterning graphene. First,the GO films were prepared by spin coating method. Then PS laser direct writing was performed, which can achieve the reduction and pattern of GO in one step. Optical microscopy images show the colors of GO films before and after re- duction change obviously. The patterns created with high resolution could be clearly identified. The deox- ygenation of the GO films by the PS laser reduction method was confirmed by using Raman spectroscopy and X-ray photoelectron spectroscopy （XPS）. In addition,the results of electrical test of the reduced and patterned graphene oxides （RP-GO） films demonstrate the change of output power of PS laser can adjust and control the conductivity of the RPGO films. Large-scale production,patterning and electrical control can be resolved by direct PS laser writing technology,which might open the door for applications of gra- phene-based materials in electronic microdevices.

关 键 词：激光直写技术 石墨烯 微电子 图案化 还原 

分 类 号：TN249[电子电信—物理电子学] TQ127.11[化学工程—无机化工]