Nb_2O_5掺杂ZnO超高致密度陶瓷靶材的制备  

Preparation of Nb_2O_5-doped ZnO Ultrahigh Density Ceramic Targets

作　　者：王晨 董磊 尚福亮[1,2,3] 高玲 杨海涛 

机构地区：[1]深圳大学材料学院,深圳518060 [2]深圳市特种功能材料重点实验室,深圳518060 [3]深圳陶瓷制备先进技术工程实验室,深圳518060

出　　处：《硅酸盐通报》2017年第9期3150-3154,共5页Bulletin of the Chinese Ceramic Society

基　　金：深圳市基础研究项目(JCYJ20160422144751573;JCYJ20160422104921235;JCYJ20140418181958489)

摘　　要：采用传统的固相烧结技术制备了Nb_2O_5掺杂ZnO陶瓷靶材,研究了不同烧结温度、Nb_2O_5掺杂量对NZO靶材的电学性能、相对密度、抗弯强度的影响。结果表明:当烧结温度1200℃,Nb_2O_5的掺杂量为0.4wt%时,其综合性能最佳,此时靶材电阻率为0.189Ω·cm,相对密度为99.46%,抗弯强度141.74 MPa。Nb2O5-doped ZnO targets were prepared by traditional solid-state sintering method. The effects of the different sintering temperatures and Nb2O5-doped amount on the electrical properties,the relative density as well as the bending resistance of the sintered target were studied. The results show that the target can reach the best comprehensive properties including a resistivity of 0. 189 Ω · cm,a relative density of 99. 46% and a bending strength of 141. 74 MPa when the sintering temperature is 1200 ℃ and Nb2O5 doping amount is 0. 4wt%.

关 键 词：陶瓷靶材 烧结 掺杂 ZNO 

分 类 号：TM283[一般工业技术—材料科学与工程] TF125[电气工程—电工理论与新技术]