直流磁控溅射功率对溅射生长GZO薄膜光电性能的影响  

Influence of Sputtering Power on Optical and Electrical Properties of GZO Films Deposited by DC Magnetron Sputtering

作　　者：姚婷婷[1] 杨勇[1] 李刚[1] 仲召进[1,2] 张宽翔 蒋继文[1] 金克武[1] 曹欣 吴可凡[3] 王芸 马立云[1] 彭寿[1] YAO Tingting YANG Yong LI Gang ZHONG Zhaojin ZHANG Kuanxiang JIANG Jiwen JIN Kewu CAO Xin WU Kefan WANG Yun MA Liyun PENG Shou(Bengbu Design ＆ Research Institute for Glass Industry, State Key Laboratory of Advanced Technology for Float Glass Technology, Bengbu 233000, China Dalian Jiaotong University, Dalian 116028, China Bengbu Second Middle School, Bengbu 233000, China)

机构地区：[1]蚌埠玻璃工业设计研究院浮法玻璃新技术国家重点实验室,安徽蚌埠233000 [2]大连交通大学,辽宁大连116028 [3]蚌埠市第二中学,安徽蚌埠233000

出　　处：《材料科学与工程学报》2017年第5期747-751,814,共6页Journal of Materials Science and Engineering

基　　金：安徽省科技攻关计划资助项目(1704a0902010;1704a0902014;1501021046)

摘　　要：本文采用直流磁控溅射沉积系统在玻璃基底上沉积镓掺杂氧化锌(GZO)薄膜,将溅射功率从120W调整到240W,步长为30W,研究功率变化对GZO薄膜的晶体结构、表面形貌、光学性能和电学性能的影响。结果表明,溅射功率对GZO薄膜电阻率有显著的影响。溅射功率为210W时薄膜呈现最低电阻率为3.31×10^(-4)Ω·cm,可见光波段平均光学透光率接近84%。随着溅射功率的增加,薄膜表面形貌和生长形态发生较大变化,并直接得到具有一定凸凹不平的微结构,GZO薄膜的致密性先增加后降低。Ga-doped ZnO （GZO） thin films were deposited by DC magnetron sputtering system on glass substrates. The sputtering power was adjusted from 120W to 240W, with the step size of 30W. The structure, surface morphology, optical and electrical properties of the GZO films prepared at different DC sputtering powers were investigated by using X-ray diffractometer, scanning electronic microscope, ultraviolet-visible spectrophotometer and Hall effect test system. The results indicated that the resistivity of the GZO films is dominated by the sputtering power. The films deposited at 210W exhibit the lowest resistivity of 3.31 × 10^-4 Ω·cm. The best average optical transmittance of the GZO films prepared is approximately 84% in the visible wavelength. With the increase of sputtering power, the surface morphology and growth form of the films are changing greatly, meanwhile with a certain uneven microstructure. The compactness of GZO films increased then decreased with the increase of the power.

关 键 词：GZO薄膜 溅射功率 电学性能 光学性能 

分 类 号：TB34[一般工业技术—材料科学与工程]