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作 者:林兴浩 张百尚[1] 陈宇山[1] LIN Xinghao ZHANG Baishang CHEN Yushan(Guangdong Institute of Scientific & Technical Information, Guangzhou 510006, China)
出 处:《世界科技研究与发展》2017年第5期440-447,共8页World Sci-Tech R&D
基 金:广东省科技计划(2017A070701005;2014B070706003)资助
摘 要:采用文献计量方法对SCIE文献数据库中1990~2016年与氮化镓(GaN)照明材料相关的科研产出进行分析,得到国内外在该领域的研究现状及趋势。通过对GaN照明材料领域科研活动基本特征的分析发现,发达国家在该领域的整体科研实力明显强于发展中国家,美国在多项统计指标中均占据主导地位。利用VOSviewer软件对文献内容进行深入挖掘,得到目前国内外在该领域的研究热点、主要产出国家/地区及机构的合作网络,以及该领域主要论文的引文情况。最后,通过对论文数、总被引数、h-index因子、ESI高被引论文数、高产机构和期刊等6项指标值进行标准化计算,对比了我国与领先国家/地区在GaN照明领域的科研综合竞争力,并分析了我国在该领域的科研特点,提出相关发展建议。Based on bibliometric method,the research outputs of gallium nit_ride (GaN) material for LED in SCIE database during the period of 1990-2016 are analyzed ,and the research situation and development tendency in this field are shown. Firstly, it is found that the research capability of GaN-based LED in developed countries is much stronger than that in devel- oping counties by analyzing the overall research outputs in the field. The U. S. , in particular,is dominant in terms of several statistical technical indicators. Secondly, the research focus, collaborative networks of main countries/regions and institu- tions, citation network of representative papers in this field are also analyzed by utilizing VOSviewer software. Finally, based on the standardized calculation of six indexes ( number of article outputs, total cited number, h-index factor, number of ESI highly-cited papers,high-yield organizations and journals), the comprehensive competitiveness of research capability of Chi- na is compared with that of the leading countries/regions. Meanwhile, the research characteristics of China in this field are analyzed and the development suggestions are also put forward in this article.
分 类 号:TN304.2[电子电信—物理电子学]
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