一种2.4 GHz CMOS射频前端电路  

A 2.4 GHz CMOS RF Front-End Circuit

作　　者：陈浪 乐建连 甘业兵[1,2] 钱敏[1,2] 叶甜春[1] CHEN Lang LE Jianlian GAN Yebing QIAN Min YE Tianchun(Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, P. R. China Hangzhou Zhongke Microelectronics Co. , Ltd. , Hangzhou 310053, P. R. China)

机构地区：[1]中国科学院微电子研究所,北京100029 [2]杭州中科微电子有限公司,杭州310053

出　　处：《微电子学》2017年第5期609-613,共5页Microelectronics

摘　　要：基于0.18μm CMOS工艺,设计了一种面向低速率低功耗应用的2.4GHz射频前端电路,包含2个单刀双掷开关、1个功率放大器和1个低噪声放大器。采用栅衬浮动电压偏置技术对传统单刀双掷开关进行了改进,以提高其线性度;功率放大器采用两级放大结构,对全集成的低噪声放大器进行了噪声优化;集成了输入输出匹配网络,采用了到地电感,以提高输入输出端的ESD性能。在接收模式时,电路的静态电流为10.7mA,增益为11.7dB,IIP3为2.1dBm,噪声系数为3.4dB。在发射模式时,电路的静态电流为17.4mA,功率增益为17.7dB,输出P1dB为20dBm,饱和功率为21.4dBm,最大PAE为23.8%,在输出功率为20dBm时的频谱满足802.15.4协议要求。A 2.4 GHz RF front-end circuit was designed and fabricated in a 0.18μm CMOS processes for low rate and low power applications.This RF front-end circuit included two single-pole double-throw switches（SPDT）,apower amplifier（PA）and a low noise amplifier（LNA）.AC-floating bias technique was used to improve the linearity of the traditional SPDT switches.The power amplifier has a two stage structure,and the noise performance of the fully integrated low noise amplifier was optimized.The input and output matching networks were integrated in this chip,and the inductors were connected to the ground to improve the ESD protection.In Rx mode,this RF front-end circuit had a quiescent current of 10.7 mA,again of 11.7 dB,an IIP3 of 2.1 dBm,a noise figure of 3.4 dB.In Tx mode,it had a quiescent current of 17.4 mA,apower gain of 17.7 dB,an output P1 dB of 20 dBm,a saturation power of 21.4 dBm,a maximum PAE of 23.8%.The spectrum met the requirements of 802.15.4 protocol when the output power was 20 dBm.

关 键 词：射频前端 低噪声放大器 单刀双掷开关 功率放大器 全集成 

分 类 号：TN432[电子电信—微电子学与固体电子学]