磁光-光致发光分析CdZnTe单晶带边浅杂质能级  

Shallow impurity levels in CdZnTe probed by magneto-photoluminescence

作　　者：祁镇[1] 盛锋锋[2] 朱亮[1] 杨建荣[2] 陈熙仁[1] 邵军[1] 

机构地区：[1]中国科学院上海技术物理研究所,红外物理国家重点实验室,上海200083 [2]中国科学院上海技术物理研究所,红外材器中心,上海200083

出　　处：《红外与毫米波学报》2017年第5期589-593,共5页Journal of Infrared and Millimeter Waves

基　　金：国家重点基础研究发展(973)计划课题(2014CB643901);上海市科委基础研究重点项目(14YF1404100,16JC1402400);国家基金面上项目(11274329,61675224)~~

摘　　要：通过对Bridgeman方法生长的CdZnTe单晶样品进行光致发光(Photoluminescence,PL)光谱测量,发现CdZnTe样品表面Te沉淀物的存在明显影响能量低于1.5 eV的深能级发光过程.进一步对CdZnTe晶锭的不同位置取样进行低温变磁场光致发光光谱测试,获得高分辨光谱信息.拟合分析结果表明:(1)在不含Te沉淀物的CdZnTe样品内部存在应力分布,并因此导致轻、重空穴带分裂;(2)1.57 eV发光特征源于浅施主杂质与价带间的复合过程.This paper reports photoluminescence（ PL） and magneto-PL study of CdZnTe single crystal grown by Bridgman method. Magneto-PL measurements on two CdZnTe samples in the sample crystal were realized at lowtemperature with sufficiently high spectral resolution and signal-to-noise ratio. PL spectra reveal that the Te inclusions near the CdZnTe surface affects obviously the PL processes energetically below1. 5 e V. Further analysis with curve-fitting process shows that（ 1） stress distribution exists inside the CdZnTe sample without Te inclusions,and the stress causes the splitting of the heavy-and light-hole subband.（ 2） The 1. 57-e V PL feature originates from the shallow-donor to valenceband recombination.

关 键 词：CdZnTe单晶 磁光光致发光光谱 应力 轻空穴 

分 类 号：O474[理学—半导体物理]