SU-8光刻胶加工工艺及应力梯度研究  

作　　者：韦剑[1] 何万益 陆颖颖 

机构地区：[1]南京邮电大学通达学院,江苏扬州225127

出　　处：《科技创新与应用》2017年第33期63-64,66,共3页Technology Innovation and Application

摘　　要：文章采用牺牲层刻蚀技术加工SU-8胶MEMS微结构,BP212正性光刻胶作为牺牲层,SU-8胶作为结构层。制造出的SU-8胶微结构完整,表面无裂纹,牺牲层释放干净。通过测量释放后的SU-8胶悬臂梁曲率半径,计算其应力梯度,研究了后烘温度对SU-8胶薄膜应力梯度的影响。This paper uses the sacrifice layer technology for processing SU-8 MEMS microstructure, BP212 positive photoresist as a sacri-ficial layer and SU-8 photoresist as structure layer. The obtained SU-8 microstructure has a complete surface with no crack and the release of the sacrificial layer is clean. The stress gradient in SU8 film has been calculated by measuring radii of released SU8 cantilevers, the influ-ence of the PEB on the stress gradient of SU-8 film was studied.

关 键 词：SU-8胶 牺牲层刻蚀 应力梯度 后烘温度 

分 类 号：TN305[电子电信—物理电子学]