真空电子器件的新机理研究  

Some New Ideas for Vacuum Electron Devices

作　　者：廖复疆[1] 

机构地区：[1]北京真空电子技术研究所,北京100015

出　　处：《真空电子技术》2017年第5期1-8,50,共9页Vacuum Electronics

摘　　要：本文对近年来真空电子器件研究中出现的一些新概念、新设想进行了介绍和评述。随着毫米波(mmW)和太赫兹(THz)频域的进一步开拓,对工作在这些频域真空电子器件的频率、功率、带宽、效率和微制造提出了更高的要求。带状电子注和多电子注是提高器件功率的重要途径;光子带隙技术和真空电子器件的结合为新型器件的发展提供了新的方法;陶瓷行波管的研制给我们带来全新的概念,特别是纳米真空三极管和光三极管概念的提出,为真空电子器件回归数字电路技术展示出令人鼓舞的前景。Some new ideas for vacuum electron devices are introduced and commented in this paper.As millimeter wave(mmW)and terahertz(THz)technique developing,the requirements for vacuum electron devices such as high frequency,high power output,wide bandwidth,high efficiency and micro-fabrication are increased.The sheet beam and multi-beam array are important ways to increase the device power output;the photonic band gap(PBG)combined with vacuum electronics will provide an approach to new device;ceramic structure TWT is a new concept for vacuum electron device;especially the metal-oxide-semiconductor field-effect transistor with a vacuum channel and vacuum electron-based photodiode concept proposals hopefully may bring vacuum electronics returning to numerical electronics.

关 键 词：毫米波 太赫兹波 真空电子 光子带隙 行波管 纳米真空三极管 

分 类 号：TN12[电子电信—物理电子学]