基于有机薄膜晶体管电特性曲线获取迁移率方法的研究  

Research on the method of obtaining mobility based on the electrical characteristic curve of OTFT

作　　者：陈跃宁[1,2] 徐征[2] 尹飞飞[1,2] 刘启东 

机构地区：[1]辽宁大学物理学院,辽宁沈阳110036 [2]北京交通大学光电子技术研究所发光与光信息技术教育部重点实验室,北京100044

出　　处：《光电子．激光》2017年第11期1174-1179,共6页Journal of Optoelectronics·Laser

基　　金：国家重点研发计划(2016YFB0401302);国家自然科学基金(11474018;61575019);北京市科委重大项目(D161100003416001);中央高校基本科研业务费专项(2016JBM066);辽宁省教育厅(L2014003);辽宁大学青年科研基金(LDQN201431)资助项目

摘　　要：场效应迁移率是描述有机薄膜晶体管(OTFT)性能的重要参数之一,目前OTFT场效应迁移率主要根据实验测得OTFT电特性曲线通过拟合计算方法获得。本文针对这种方法进行深入研究发现,OTFT的场效应迁移率与其工作状态有关。在线性工作状态下,OTFT的线性区场效应迁移率随着栅电压的增加而增大;在饱和工作状态下,当漏电压V_D>1.5VG_(max)时,饱和区场效应迁移率为一定值,表明采用此值表征OTFT的电性能更加客观和精确。At present, the method of obtaining the field-effect mobility of organic thin film transistors （OTFT） is mainly to calculate the field-effect mobility according to the electrical characteristic curves of OTFT. The method is studied deeply in this paper. It is found that the field-effect mobility of OTFT is related to its operating state. In the linear operating state, the field effect mobility of increases with the increase of gate voltage. Therefore, when the linear field effect mobility is used to represent the electrical properties of an OTFT, the corresponding gate voltage must be indicated. In the saturated operating state,when the leakage voltage is greater then 1.5 times of the movximum gate voltage,the field effect mobility tends to be a certain value. Using this value to characterize the electrical properties of OTFT is more objective and accurate.

关 键 词：有机薄膜晶体管(OTFT) 场效应迁移率 栅电压最大值 

分 类 号：TN253[电子电信—物理电子学]