IGBT模块通态电阻与键合线故障关系研究  

Study of the Relationship Between the On-resistance and the Bonding-wire Lift of the IGBT Module

作　　者：孔梅娟[1] 李志刚[1] 

机构地区：[1]河北工业大学电气工程学院,天津300130

出　　处：《电力电子技术》2017年第11期91-93,共3页Power Electronics

基　　金：国家科技支撑计划(2015BAA09B01);国家自然科学基金(51377044)~~

摘　　要：绝缘栅双极型晶体管(IGBT)模块通过键合引线实现与外电路的电气连接,并联的铝键合线若发生脱落现象,会导致模块的等效通态电阻增大,通过对电阻的计算,可直接对模块进行故障诊断。通过实验得出IGBT模块通态电压与电流之间的关系曲线,计算出健康与键合线故障状态下的IGBT模块等效通态电阻的变化,并分析得出键合线脱落根数超过总键合线数的40%左右时,IGBT模块发生失效故障。The insulated gate bipolar transistor（IGBT） modules are electrically connected with the external circuit through the bonding-wires.If the aluminum bonding-wires of the parallel connection are disconnected,the equivalent onresistance of the module will increase.Through the calculation of the resistance,the bonding-wire lift off of IGBT modules can be directly diagnosed.The relationship between on-state voltage and current of the IGBT module is obtained through experiments.The change of the equivalent on-resistance of the IGBT module under the state of health and bonding fault are calculated, and the failure of IGBT module can be concluded when more than 40% of the total number of bonding-wires are disconnected.

关 键 词：绝缘栅双极型晶体管 通态电阻 状态监测 

分 类 号：TN322.8[电子电信—物理电子学]