全球集成电路技术发展趋势研究  

Development Trend of Global Integrated Circuit Technology

作　　者：王龙兴 

机构地区：[1]上海市集成电路行业协会,上海201203

出　　处：《集成电路应用》2017年第11期13-16,共4页Application of IC

基　　金：上海市软件和集成电路产业发展专项基金(2016.160505)

摘　　要：2016年全球半导体投资支出为679亿美元,年增5.1%,有13家厂商投资支出超过10亿美元。全球研发经费超过565亿美元,年增1%。全球集成电路主流技术为16/14 nm,2016年底三星和台积电导入10 nm技术,2017年第一季度进入量产。由于10 nm是过渡性节点,2017年全球技术领先厂商将提前展开7 nm技术研发竞争。FD-SOI(全耗尽绝缘体上单晶硅)的技术路线崭露头角,备受关注。Global semiconductor investment spending in 2016 was S67 billion 900 million, an increase of 5.1%. There were 13 manufacturers spending more than S1 billion. Global R ＆ D funds had exceeded 56 billion 500 million US dollars, with an annual increase of 1%. The mainstream technology of global integrated circuit was 16/14 nm. At the end of 2016, Samsung and TSMC introduced 10 nm technology and entered mass production in the first quarter of 2017. Because 10 nm is a transitional node, the global leading technology vendors will launch 7 nm technology research and development competition in 2017. The technology roadmap of FD-SOI （fully depleted on insulator monocrystalline silicon） has attracted much attention.

关 键 词：集成电路技术 节点制程 16/14nm FD—SOI 

分 类 号：TN40[电子电信—微电子学与固体电子学] F416.63[经济管理—产业经济]