全耗尽绝缘硅FD-SOI工艺技术的特点分析  

Analysis of Characteristic on Fully Depleted Silicon on Insulator FD-SOI Technology

作　　者：孔文 

机构地区：[1]深圳市安芯易电子有限公司,广东518031

出　　处：《集成电路应用》2017年第11期38-41,共4页Application of IC

基　　金：上海市软件和集成电路产业发展专项基金(2016.160220)

摘　　要：在先进的IC制造工艺方面,由Intel主导的Fin FET一直大行其道。而最近这几年,SOI,包括FD-SOI和RF-SOI越来越受到人们的关注,特别是随着物联网和5G时代的到来,其技术优势和应用前景也越发地被看好。在应用层面,总的来说,Fin FET的目标市场是中高端的高性能集成电路,而FD-SOI则是面向中端的、要求低功耗和高性价比的应用。In the advanced IC manufacturing process, the FinFET led by Intel has been popular. In recent years, SOl, including FD-SOI and RF-SOI, has attracted more and more attention. Especially, with the advent of the Internet of things and the era of 5G, its technical advantages and application prospects are more and more optimistic. On the application level, in general, the target market of FinFET is the high performance integrated circuit of the middle and high end. And FD-SOI is the middle end, requiring low power consumption and costeffective applications.

关 键 词：集成电路制造 全耗尽绝缘硅 RF-SOI 

分 类 号：TN405[电子电信—微电子学与固体电子学]