EUV光刻技术的难点分析  

Looming Issues and Tradeoffs for EUV

作　　者：Mark LaPedus 

机构地区：[1]中国台湾电子工程专辑EE Times

出　　处：《集成电路应用》2017年第11期47-51,共5页Application of IC

摘　　要：极紫外(EUV)光刻技术正蓄势待发,但为了将这项人们期待已久的技术用于大规模生产,还仍然有一些难题有待解决。EUV光刻是在芯片上图案化微小特征的下一代技术,原本预期在2012年左右投入生产。但这么多年过去了,EUV不断延后,从一个节点拖到了下一个节点。和之前的技术一样,要将EUV投入大规模制造,有一些问题还要解决。芯片制造商还必须权衡各种复杂的利弊关系。Momentum is building for extreme ultraviolet （EUV） lithography, but there are still some major challenges to solve before this long-overdue technology can be used for mass production.EUV lithographyma next-generation technology that patterns tiny features on a chip--was supposed to move into production around 2012. But over the years, EUV has encountered several delays, pushing out the technology from one node to the next. But as before, there are several pieces that must come together before EUV moves into HVM. And chipmakers must also weigh an assortment of complex tradeoffs.

关 键 词：集成电路制造 EUV光刻 图案对准 光源 防护膜 

分 类 号：TN405[电子电信—微电子学与固体电子学]