氮掺铟锡锌薄膜晶体管的制备及其光电特性  

Fabrication and Electrical and Optical Properties of Nitrogen-doped In-Sn-Zn Oxide Thin-film Transistors

作　　者：李治玥 吕英波[1] 赵继凤[1] 宋淑梅[1] 杨波波 辛艳青[1] 王昆仑[1] 杨田林[1] 

机构地区：[1]山东大学空间科学与物理学院,山东威海264209

出　　处：《发光学报》2017年第12期1622-1628,共7页Chinese Journal of Luminescence

基　　金：国家自然科学基金(11504202);山东省科技攻关课题(2014GGX102022)资助项目~~

摘　　要：以P型<100>硅作为衬底,采用射频磁控溅射技术,在室温下制备了氮掺杂氧化铟锡锌薄膜晶体管(ITZO TFTs),研究了氮气流量对氧化铟锡锌薄膜晶体管结构、光学、电学特性以及稳定性的影响。实验结果表明:在不同氮气流量条件下制备的氧化铟锡锌薄膜均为非晶态,在可见光范围内的平均透过率均在90%左右,光学带隙数值在3.28~3.32 e V之间变化。在氮气流量为4 m L/min时制备的ITZO TFTs,有源层与栅极电介质界面处的界面态密度(N^(max)_s)仅为4.3×10^(11)cm^(-2),场效应迁移率(μ_(FE))为18.72 cm^2/(V·s),开关比(I_(on/off))为10~6,亚阈值摆幅(S)为0.39 V/dec,电学性能最优。栅极正偏压应力测试结果表明,该器件具有最强的稳定性。因此,适量的氮掺杂可有效地实现器件氧空位的钝化,降低器件的界面态密度,提高ITZO TFTs的电学性能及稳定性。In-Sn-Zn oxide thin-film transistors were deposited at different nitrogen flow rates on P-Si 100 substrate by RF magnetron sputtering. The influence of nitrogen on the structure,optical and electrical properties and stabilities of ITZO TFTs was studied. The results show that nitrogen has no obvious effect on the structure of ITZO films and all thin films are amorphous. The average transmittance of all ITZO films approach or exceed 90% in the visible region and the optical band gaps are 3. 28-3. 32 e V. When the nitrogen flow rates increase to 4 m L/min during the sputter deposition,the ITZO TFTs with low interface state density（ 4. 3 × 10^11 cm^-2） show excellent electrical properties,the sub-threshold swing is 0. 39 V/dec and on/off ratio is 10^6 operated with the field-effect mobility（ μFE） of 18. 72 cm^2/（ V·s）. Moreover,the TFTs show better stability than others in the positive gate bias stress test.Overall,the suitable addition of nitrogen can improve the electrical performance and the stability of the ITZO TFTs by the passivation of oxygen vacancies and the drop of interface state density.

关 键 词：氧化铟锡锌薄膜晶体管 射频磁控溅射 氮掺杂 界面态密度 

分 类 号：TN321.5[电子电信—物理电子学]