Segregations and desorptions of Ge atoms in nanocomposite Si_(1-x)Ge_x films during high-temperature annealing  

作　　者：汪煜 杨濛 王刚 魏晓旭 王军转 李昀 左则文 郑有炓 施毅 

机构地区：[1]Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and Engineering,Nanjing University [2]College of Physics and Electronics Information, Anhui Normal University

出　　处：《Chinese Physics B》2017年第12期439-443,共5页中国物理B（英文版）

摘　　要：Nanocomposite Si1-xGex films are deposited by dual-source jet-type inductively coupled plasma chemical vapor deposition （jet-ICPCVD）. The segregations and desorptions of Ge atoms, which dominate the structural evolutions of the films during high-temperature annealing, are investigated. When the annealing temperature （Ta） is 900℃, the nanocomposite Si1-xGex films are well crystallized, and nanocrystals （NCs） with the core-shell structure form in the films. After being annealed at 1000℃ （above the melting point of bulk Ge）, Ge atoms accumulate on the surfaces of Ge-rich films, whereas pits appear on films with lower Ge content, resulting from desorption. Meanwhile, voids are observed in the films. A cone-like structure involving the percolation of the homogeneous clusters and the crystallization of NCs enhances Ge segregation.Nanocomposite Si1-xGex films are deposited by dual-source jet-type inductively coupled plasma chemical vapor deposition （jet-ICPCVD）. The segregations and desorptions of Ge atoms, which dominate the structural evolutions of the films during high-temperature annealing, are investigated. When the annealing temperature （Ta） is 900℃, the nanocomposite Si1-xGex films are well crystallized, and nanocrystals （NCs） with the core-shell structure form in the films. After being annealed at 1000℃ （above the melting point of bulk Ge）, Ge atoms accumulate on the surfaces of Ge-rich films, whereas pits appear on films with lower Ge content, resulting from desorption. Meanwhile, voids are observed in the films. A cone-like structure involving the percolation of the homogeneous clusters and the crystallization of NCs enhances Ge segregation.

关 键 词：SI1-XGEX ANNEALING SEGREGATION DESORPTION 

分 类 号：O484[理学—固体物理]