云南高校图书馆联盟文献共享服务平台- SI1-XGEX

SI1-XGEX: 作品数：29被引量：38H指数：4; 导出分析报告; 相关领域：电子电信理学更多>>; 相关作者：宋建军胡辉勇张鹤鸣宣荣喜韩平更多>>; 相关机构：西安电子科技大学南京大学中国科学院华北电力大学更多>>; 相关期刊：《新能源进展》《功能材料》《红外与毫米波学报》《Chinese Physics Letters》更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划国家教育部博士点基金国家部委资助项目更多>>

采用Si_(1-x)Ge_x渐变缓冲层技术生长Si基Ge薄膜及其性质分析: 《太阳能学报》2019年第2期549-555,共7页张航陈诺夫杨秀钰徐甲然陈梦陶泉丽; 国家自然科学基金(61006050);北京市自然科学基金(2151004);中央高校基本科研专项资金(2016MS50;2018QN054); 利用超高真空磁控共溅沉积系统在Si(100)衬底上溅射Ge组分渐变的Si_(1-x)Ge_x缓冲层,并在其上制备Ge薄膜,采用快速热退火(RTA)对Ge薄膜进行退火处理。采用X薄膜表征。结果表明:使用该方法制备的Ge800℃,110 s的退火条件下随衬底温度的升...; 关键词：磁控溅射 Ge薄膜快速热退火 Si1-xGex缓冲层择优生长

Segregations and desorptions of Ge atoms in nanocomposite Si_(1-x)Ge_x films during high-temperature annealing: 《Chinese Physics B》2017年第12期439-443,共5页汪煜杨濛王刚魏晓旭王军转李昀左则文郑有炓施毅; Nanocomposite Si1-xGex films are deposited by dual-source jet-type inductively coupled plasma chemical vapor deposition （jet-ICPCVD）. The segregations and desorptions of Ge atoms, which dominate the structural evolu...; 关键词：SI1-XGEX ANNEALING SEGREGATION DESORPTION

Strain induced changes in performance of strained-Si/strained-Si1-yGey/relaxed-Si1-xGex MOSFETs and circuits for digital applications: 《Journal of Central South University》2017年第6期1233-1244,共12页Kumar Subindu Kumari Amrita Das Mukul K; Growing a silicon(Si) layer on top of stacked Si-germanium(Ge) compressive layer can introduce a tensile strain on the former, resulting in superior device characteristics. Such a structure can be used for high perfor...; 关键词：complementary METAL-OXIDE-SEMICONDUCTOR (CMOS) HIGH-K dielectric material inverter METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT transistors (MOSFETs) SiGe series resistance strain

磁控溅射法制备Si1-xGex/B多层薄膜及其热电性能研究: 《新能源进展》2016年第5期345-350,共6页杜鑫苗蕾刘呈燕王潇漾; 国家自然科学基金(51572049,51562005);广东省科技计划项目(2013B050800006);中国科学院BIC对外合作项目(182344KYSB20130006); 本文通过磁控溅射法制备了一种独特的Si Ge/B五层结构薄膜材料,每层结构包含60 nm的Si60Ge40层和0.55 nm的B层。实验考察了薄膜材料的热电性能,结果表明:B掺杂的溅射时间最佳为30 s;当退火温度为650℃时,薄膜的致密性最好,且在此温度下...; 关键词：热电材料硅锗薄膜纳米结构热电性能

Wavelength-tunable infrared light emitting diode based on ordered ZnO nanowire/Si1-xGex alloy heterojunction被引量：2: 《Nano Research》2015年第8期2676-2685,共10页Taiping Zhang Renrong Liang Lin Dong Jing Wang Jun Xu Caofeng Pan; The authors are grateful for the support from the ＂Thousands Talents＂ Program for Pioneer Researchers and Their Innovation Teams, China; the President＇s Funding of the Chinese Academy of Sciences; the National Natural Science Foundation of China （Nos. 51272238, 21321062, 51432005 and 61405040）; the Innovation Talent Project of Henan Province （No. 13HASTIT020）; the Talent Project of Zhengzhou University （No. ZDGD13001） and the Surface Engineering Key Lab of LIPCAST; the Tsinghua University Initiative Scientific Research Program, the National Natural Science Foundation of China （No. 61306105）.; A novel infrared light emitting diode （LED） based on an ordered p-n heterojunction built of a p-Si1-xGe/alloy and n-ZnO nanowires has been developed. The electroluminescence （EL） emission of this LED is in the inf...; 关键词：ZnO nanowire SiGe alloy infrared light emittingdiode wavelength-tunable

Impact of Surface Passivation on the Electronic Structure and Optical Properties of the Si1-xGex Nanowires被引量：1: 《Chinese Physics Letters》2015年第2期119-122,共4页赖信张析张依兮向钢; Supported by the National Natural Science Foundation of China under Grant No 11004142;the Program for New Century Excellent Talents in University under Grant No 11-035;the Project Sponsored by the Scientific Research Foundation for ROCS of the Ministry of Education of China; The electronic structures and optical properties of the [llO]-oriented Sil-xGex nanowires （NWs） passivated with different functional groups （-H, -F and-OH） are investigated by using first-principles calculations. ...; 关键词：110 OH x)Ge_x Nanowires Impact of Surface Passivation on the Electronic Structure and Optical Properties of the Si Ge

具有poly-Si_(1-x)Ge_x栅的应变SiGe p型金属氧化物半导体场效应晶体管阈值电压漂移模型研究: 《物理学报》2014年第23期284-289,共6页刘翔宇胡辉勇张鹤鸣宣荣喜宋建军舒斌王斌王萌; 教育部博士点基金(批准号:JY0300122503);中央高等学校基本科研基金(批准号:K5051225014;K5051225004)资助的课题~~; 针对具有poly-Si1-x Ge x栅的应变Si Ge p型金属氧化物半导体场效应晶体管(PMOSFET),研究了其垂直电势与电场分布,建立了考虑栅耗尽的poly-Si1-x Ge x栅情况下该器件的等效栅氧化层厚度模型,并利用该模型分析了poly-Si1-x Ge x栅及应变S...; 关键词：应变SI Ge p型金属氧化物半导体场效应晶体管 poly-Si1-xGex栅热载流子阈值电压

Analytical model for subthreshold current and subthreshold swing of short-channel double-material-gate MOSFETs with strained-silicon channel on silicon–germanium substrates被引量：1: 《Journal of Semiconductors》2014年第10期30-36,共7页Pramod Kumar Tiwari Gopi Krishna Saramekala Sarvesh Dubey Anand Kumar Mukhopadhyay; The present work gives some insight into the subthreshold behaviour of short-channel double-material- gate strained-silicon on silicon-germanium MOSFETs in terms of subthreshold swing and off-current. The formu- latio...; 关键词：strained-Si channel Si1-xGex substrate dual-metal gate subthreshold current subthreshold swing

基于透射光谱确定微晶硅锗薄膜的光学常数被引量：2: 《光电子．激光》2014年第1期107-112,共6页黄振华张建军倪牮李天微曹宇王昊赵颖; 国家重点基础研究发展计划(2011CBA00705;2011CBA00706;2011CBA00707);国家自然科学基金(61377031);天津市应用基础及前沿技术研究计划(12JCQNJC01000);中央高校基本科研业务费专项资金(65012371);高等学校博士学科点专项科研基金(20120031120044)资助项目; 结合多层结构模型以及柯西色散公式,给出一种由透射谱提取微晶硅锗(μc-Si1-x Gex:H)薄膜光学常数的Matlab方法。与Swanepeol方法、PUMA(pointwise unconstrained minimization approach)方法相比,Matlab法通过透射率极值的位置而非幅...; 关键词：微晶硅锗(μc-Si1-xGex H) 光学常数 Swanepeol法 ASA

Longitudinal,transverse,density-of-states,and conductivity masses of electrons in(001),(101) and(111) biaxiallystrained-Si and strained-Si_(1-x)Ge_x被引量：5: 《Science China(Physics,Mechanics & Astronomy)》2012年第11期2033-2037,共5页SONG JianJun YANG Chao ZHANG HeMing HU HuiYong ZHOU ChunYu WANG Bin; supported by the Research Fund for the Doctoral Program of Higher Education of China (Grant No. JY0300122503);the National key Laboratory of Analog Integrated Circuitry Research Fund (Grant No.P140c090303110c0904); In this study,the electron effective masses,including longitudinal,transverse,density-of-states and conductivity effective masses,have been systematically investigated in(001),(101) and(111) biaxially strained Si and ...; 关键词：strained Si strained Si1-xGex effective mass electron

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