Investigation on optical and photoluminescence properties of organic semiconductor Al-Alq3 thin films for organic light-emitting diodes application  

作　　者：张帆 王聪 银恺 董欣然 宋雨欣 田亚湘 段吉安 

机构地区：[1]State Key Laboratory of High Performance and Complex Manufacturing, College of Mechanical and Electrical Engineering, Central South University, Changsha 410083, China

出　　处：《Chinese Optics Letters》2017年第11期69-72,共4页中国光学快报（英文版）

基　　金：supported by the National Natural Science Foundation of China(NSFC)(Nos.91323301 and 51505505);the Natural Science Foundation of Hunan Province(No.2016JJ3147);the China Postdoctoral Science Foundation(Nos.2015M572264 and 2016T90757);the Self-selected Topic Fund of State Key Laboratory of High Performance and Complex Manufacturing(No.ZZYJKT2015-08);the Fundamental Research Funds for the Central Universities of Central South University

摘　　要：The optical constants,photoluminescence properties,and resistivity of Al-Alq3 thin films prepared by the thermal co-evaporation method on a silicon substrate are studied with various Al fractions.A variable angle spectroscopic ellipsometry is employed to determine the optical constants in the wavelength from 300 to 1200 nm at incidence angles of 65°,70°,and 75°,respectively.Both the refractive indices and extinction coefficient apparently increase with increasing Al fractions.The intensity of photoluminescence spectra gradually increases with decreasing Al fractions due to intrinsic energy level transition of Alq3 organic semiconductor in the ultraviolet wave band.The resistivity decreases from 42.1 to 3.36 Ω·cm with increasing Al fraction from 40% to 70%,resulting in a larger emission intensity in photoluminescence spectra for the 40% Al fraction sample.The optical constants,photoluminescence properties,and resistivity of Al-Alq3 thin films prepared by the thermal co-evaporation method on a silicon substrate are studied with various Al fractions.A variable angle spectroscopic ellipsometry is employed to determine the optical constants in the wavelength from 300 to 1200 nm at incidence angles of 65°,70°,and 75°,respectively.Both the refractive indices and extinction coefficient apparently increase with increasing Al fractions.The intensity of photoluminescence spectra gradually increases with decreasing Al fractions due to intrinsic energy level transition of Alq3 organic semiconductor in the ultraviolet wave band.The resistivity decreases from 42.1 to 3.36 Ω·cm with increasing Al fraction from 40% to 70%,resulting in a larger emission intensity in photoluminescence spectra for the 40% Al fraction sample.

关 键 词：evaporation EXTINCTION apparently ultraviolet CONSTANTS resistivity DECREASING IMPURITY intrinsic indices 

分 类 号：TN383.1[电子电信—物理电子学]