Research on proton radiation effects on CMOS image sensors with experimental and particle transport simulation methods  

作　　者：Yuanyuan XUE Zujun WANG Minbo LIU Baoping HE Zhibin YAO Jiangkun SHENG Wuying MA Guantao DONG Junshan JIN 

机构地区：[1]State Key Laboratory of Intense Pulsed Irradiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi 'an, 710024, China

出　　处：《Science China(Information Sciences)》2017年第12期110-112,共3页中国科学（信息科学）（英文版）

基　　金：supported by National Natural Science Foundation of China(Grant Nos.11305126,11235008);Foundation of State Key Laboratory of China(Grant No.SKLIPR1211)

摘　　要：Recently,complementary metal-oxide semiconductor image sensors（CISs）have become a key element of the imaging instrument and have been widely used in many scientific applications[1,2]such as space remote sensing,medical imaging,and nuclear power plant monitoring.However,CISs used in these harsh radiation environments are susceptible to damage by particles or rays.Recently,complementary metal-oxide semiconductor image sensors（CISs）have become a key element of the imaging instrument and have been widely used in many scientific applications[1,2]such as space remote sensing,medical imaging,and nuclear power plant monitoring.However,CISs used in these harsh radiation environments are susceptible to damage by particles or rays.

关 键 词：PROTON harsh instrument COMPLEMENTARY environments HAVE SUSCEPTIBLE PIXEL posed NUCLEAR 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]