High energy proton and heavy ion induced single event transient in 65-nm CMOS technology  

作　　者：Jiaqi LIU Yuanfu ZHAO Liang WANG Dan WANG Hongchao ZHENG Maoxin CHEN Lei SHU Tongde LI Dongqiang LI Wei GUO 

机构地区：[1]Beijing Microelectronics Technology Institute, Beijing 100076, China [2]School of Astronautics, Harbin Institute of Technology, Harbin 150001, China

出　　处：《Science China(Information Sciences)》2017年第12期119-121,共3页中国科学（信息科学）（英文版）

基　　金：supported in part by the National Natural Science Foundation of China(Grant Nos.11690045,61674015)

摘　　要：As technology extends to nanometer scales,the critical charge to induce a single event decreases along with the technology node,and the threshold linear energy transfer（LET）for a soft error also decreases[1].Meanwhile,as the operating frequency of the integrated circuit（IC）increases,the possibility for single event transients（SETs）to be captured increases.Moreover,SETs haveAs technology extends to nanometer scales,the critical charge to induce a single event decreases along with the technology node,and the threshold linear energy transfer（LET）for a soft error also decreases[1].Meanwhile,as the operating frequency of the integrated circuit（IC）increases,the possibility for single event transients（SETs）to be captured increases.Moreover,SETs have

关 键 词：PROTON NANOMETER CAPTURED possibility NAND irradiation have tungsten NUCLEUS mitigation 

分 类 号：TN40[电子电信—微电子学与固体电子学]